Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS
文献类型：期刊论文
| 作者 | Yin, Yang1,2; Xu, Wanjin1,2; Ran, Guangzhao1,2; Qin, Guogang1,2; Zhang, Bin3 |
| 刊名 | FUNCTIONAL MATERIALS LETTERS
 |
| 出版日期 | 2011-09-01 |
| 卷号 | 4页码:255-259 |
| 关键词 | Si-rich silicon nitride luminescence Er3+ 1.54 mu m emission energy transfer electrical transport |
| ISSN号 | 1793-6047 |
| DOI | 10.1142/S1793604711002019 |
| 英文摘要 | Both Er-doped Si-rich silicon nitride (Er:Si3(1+x)N4) films and electroluminescence (EL) devices with structure of indium tin oxide/Er:Si3(1+x)N4/p-Si with varying Si and Er contents have been fabricated by reactive magnetron sputtering technique. We have investigated the effects of the excess Si content in a wide range (x from 0 to 2.1) on the Er3+ 1.54 mu m photoluminescence (PL), EL and the electrical transport of the Er:Si3(1+x)N4 films. It is found that the Er3+ 1.54 mu m PL intensity of the Er:Si3(1+x)N4 films and the EL power efficiency of the Er:Si3(1+x)N4 devices exhibit strong dependences on x and are enhanced by one to two orders of magnitude around x = 0.27 and x = 0.53, respectively. The Er concentration also has a great influence on both Er3+ 1.54 mu m PL and EL of the Er:Si3(1+x)N4 films. The optimum Er concentrations for PL and EL in the Er:Si3(1+x)N4 films with x = 0.53 are both similar to 3 at.%. |
| WOS关键词 | TRANSPORT |
| 资助项目 | National Natural Science Foundation of China[10874011] ; National Natural Science Foundation of China[50732001] ; National Natural Science Foundation of China[10674012] ; National Natural Science Foundation of China[60877022] ; National Basic Research Programme of China (973 Programme)[2007CB613401] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000302055300010 |
| 出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
| 资助机构 | National Natural Science Foundation of China ; National Basic Research Programme of China (973 Programme) |
| 源URL | [http://119.78.100.186/handle/113462/34575]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Ran, Guangzhao |
| 作者单位 | 1.Peking Univ, Sch Phys, Beijing 100871, Peoples R China 2.Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 3.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yin, Yang,Xu, Wanjin,Ran, Guangzhao,et al. Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS[J]. FUNCTIONAL MATERIALS LETTERS,2011,4:255-259. |
| APA | Yin, Yang,Xu, Wanjin,Ran, Guangzhao,Qin, Guogang,&Zhang, Bin.(2011).Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS.FUNCTIONAL MATERIALS LETTERS,4,255-259. |
| MLA | Yin, Yang,et al."Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS".FUNCTIONAL MATERIALS LETTERS 4(2011):255-259. |
入库方式： OAI收割
来源：近代物理研究所
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