In situ Rutherford backscattering spectrometry analysis of films by combination with sputter etching
文献类型：期刊论文
| 作者 | Jiang, L; Liu, B; Zhou, ZY; He, MH; Zhao, GQ; Zong, XF |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 1999 |
| 卷号 | 16页码:770-772 |
| ISSN号 | 0256-307X |
| 英文摘要 | We have set up an experimental system consisting of an ion gun and a Rutherford backscattering spectrometry(RBS) analysis chamber. Using this system, in situ 2Mev He-4(+) RBS analysis of films is carried out by combination with sputter etching of low energy Ar+ ions. As an example of the sputtering/RBS method, the analysis of three samples, i.e., Si/(GexSi1-x/Si)/Si(100), WSix/SiO2/Si and CoSix/Si, is presented in this paper. After an appropriate fraction of the thick layer is removed by sputtering, the back edge of the Ge peak is separated from Si RBS spectrum an the interface and the O peak of the buried SiO2 layer can be identified. The change of the doped Ti and W concentrations related to Co on the top surface is observed. The advantages of this analytical method and its possible applications in film are discussed. |
| WOS关键词 | IONS |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | ALLERTON PRESS INC |
| WOS记录号 | WOS:000083261500025 |
| 源URL | [http://119.78.100.186/handle/113462/36190]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Jiang, L |
| 作者单位 | 1.Fudan Univ, Inst Modern Phys, Accelerator Based Atom & Nucl Phys Lab, Shanghai 200433, Peoples R China 2.Fudan Univ, Dept Mat Sci, Natl Microanal Ctr Microelect Mat & Devices, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jiang, L,Liu, B,Zhou, ZY,et al. In situ Rutherford backscattering spectrometry analysis of films by combination with sputter etching[J]. CHINESE PHYSICS LETTERS,1999,16:770-772. |
| APA | Jiang, L,Liu, B,Zhou, ZY,He, MH,Zhao, GQ,&Zong, XF.(1999).In situ Rutherford backscattering spectrometry analysis of films by combination with sputter etching.CHINESE PHYSICS LETTERS,16,770-772. |
| MLA | Jiang, L,et al."In situ Rutherford backscattering spectrometry analysis of films by combination with sputter etching".CHINESE PHYSICS LETTERS 16(1999):770-772. |
入库方式： OAI收割
来源：近代物理研究所
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