The formation and characteristics of Si1-xCx alloys in Si crystals by means of implantation of cions with different doses
文献类型：期刊论文
| 作者 | Wang, YS; Li, JM; Jin, YF; Wang, YT; Lin, LY |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2000-11-01 |
| 卷号 | 49页码:2210-2213 |
| 关键词 | Si1-xCx alloy ion implantation solid phase epitaxy |
| ISSN号 | 1000-3290 |
| 英文摘要 | Carbon ions with concentration of (0.6-1.5)% were implanted into silicon crystals at room temperature and Si1-xCx alloys were grown by solid phase epitaxy with high temperature annealing. The formation and characteristics of Si1-xCx alloys under different implanted carbon doses were studied. If the implanted carbon atom concentration was less than 0.6%, carbon atoms would tend to combine with the defects produced during implantation and it was difficult for Si1-xCx alloys to form during annealing at 850-950 degreesC. With the increase of implanted C concentration, almost all implanted carbon atoms would occupy substitution positions to form Si1-xCx alloys, but only part of implanted carbon atoms would occupy the substitution position to form Si1-xCx alloys as the implanted dose increased to 1.5 %. Most Si1-xCx alloy phases would vanish as the annealing temperature was increased higher. |
| WOS关键词 | CARBON |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000165204200018 |
| 出版者 | CHINESE PHYSICAL SOC |
| 源URL | [http://119.78.100.186/handle/113462/36530]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Wang, YS |
| 作者单位 | 1.Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, YS,Li, JM,Jin, YF,et al. The formation and characteristics of Si1-xCx alloys in Si crystals by means of implantation of cions with different doses[J]. ACTA PHYSICA SINICA,2000,49:2210-2213. |
| APA | Wang, YS,Li, JM,Jin, YF,Wang, YT,&Lin, LY.(2000).The formation and characteristics of Si1-xCx alloys in Si crystals by means of implantation of cions with different doses.ACTA PHYSICA SINICA,49,2210-2213. |
| MLA | Wang, YS,et al."The formation and characteristics of Si1-xCx alloys in Si crystals by means of implantation of cions with different doses".ACTA PHYSICA SINICA 49(2000):2210-2213. |
入库方式： OAI收割
来源：近代物理研究所
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