The effects of pre-irradiation on the formation of Si1-xCx alloys
文献类型：期刊论文
| 作者 | Wang, YS; Li, JM; Wang, YB; Wang, YT; Sun, GS; Lin, LY |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2001-07-01 |
| 卷号 | 50页码:1329-1333 |
| 关键词 | ion implantation solid phase epitaxy Si1-xCx alloy |
| ISSN号 | 1000-3290 |
| 英文摘要 | Carbon ions were implanted into crystal Si to a concentration of (0.6-1.5)at% at room temperature. Some samples were pre-irradiated with S-29(i)+ ions, while others were not pre-irradiated. Then the two kinds of samples were implanted with C-12(+) ions simultaneously, and Si1-xCx alloys were grown by solid phase epitaxy with high-temperature annealing. The effects of preirradiation on the formation of Si1-xCx alloys were studied. If the dose of implanted C ion was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation, and then it was difficult for Si1-xCx alloys to form after annealine, at 950 degreesC. Pre-irradiation was advantageous for Si1-xCx alloy formation. With the increase of C ion dose, the damage produced by C ions increased. Pre-irradiation was unfavorable for Si1-xCx, alloy formation. If the implanted C concentration was higher than that for solid phase epitaxy solution, only part of the implanted C atoms form Si1-xCx alloys and the effects of pre-irradiation could be neglected. As the annealing temperature was increased to 1050 degreesC, Si1-xCx alloys in both pre-irradiated and unpreirradiated samples of low C concentration remained, whereas most part of Si1-xCx alloys in samples with high C concentration vanished. |
| WOS关键词 | SI ; IMPLANTATION ; CARBON |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000169720600026 |
| 出版者 | CHINESE PHYSICAL SOC |
| 源URL | [http://119.78.100.186/handle/113462/37041]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Wang, YS |
| 作者单位 | 1.Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, YS,Li, JM,Wang, YB,et al. The effects of pre-irradiation on the formation of Si1-xCx alloys[J]. ACTA PHYSICA SINICA,2001,50:1329-1333. |
| APA | Wang, YS,Li, JM,Wang, YB,Wang, YT,Sun, GS,&Lin, LY.(2001).The effects of pre-irradiation on the formation of Si1-xCx alloys.ACTA PHYSICA SINICA,50,1329-1333. |
| MLA | Wang, YS,et al."The effects of pre-irradiation on the formation of Si1-xCx alloys".ACTA PHYSICA SINICA 50(2001):1329-1333. |
入库方式： OAI收割
来源：近代物理研究所
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