中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of ion implantation on the low-temperature electron conduction of polystyrene films

文献类型:期刊论文

作者Wang, XQ; Xie, EQ; Qian, BZ; He, DY; Zhu, ZY; Jin, YF
刊名ACTA PHYSICA SINICA
出版日期2002-05-01
卷号51页码:1094-1097
关键词polystyrene Si ion implantation low-temperature electrical conduction
ISSN号1000-3290
英文摘要Polystyrene (PS) films were irradiated by 3MeV silicon ions at room temperature with doses ranging from 1 x 10(12) to 3 x 10(14) ions/cm(2) The electrical conduction of the films was measured in the temperature range from room temperature to liquid nitrogen temperature. It was found that electrical resistance of the films increases with the decrease of the measured temperature. The electrical resistance of the sample irradiated by low-dose ions show a dramatic change at the temperature of 155K. Different conduction mechanisms were found for the high-dose ion-irradiated samples. While the activation conduction was observed at higher temperatures, the low-temperature conduction was dominated by tunneling process. The dependence of the electrical resistance on the irradiation dose was interpreted in term of percolation theory.
WOS关键词CARBON
WOS研究方向Physics
语种英语
WOS记录号WOS:000175511900031
出版者CHINESE PHYSICAL SOC
源URL[http://119.78.100.186/handle/113462/37970]  
专题中国科学院近代物理研究所
通讯作者Wang, XQ
作者单位1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Wang, XQ,Xie, EQ,Qian, BZ,et al. Influence of ion implantation on the low-temperature electron conduction of polystyrene films[J]. ACTA PHYSICA SINICA,2002,51:1094-1097.
APA Wang, XQ,Xie, EQ,Qian, BZ,He, DY,Zhu, ZY,&Jin, YF.(2002).Influence of ion implantation on the low-temperature electron conduction of polystyrene films.ACTA PHYSICA SINICA,51,1094-1097.
MLA Wang, XQ,et al."Influence of ion implantation on the low-temperature electron conduction of polystyrene films".ACTA PHYSICA SINICA 51(2002):1094-1097.

入库方式: OAI收割

来源:近代物理研究所

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