中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Application of stratified implantation for silicon micro-strip detectors

文献类型:期刊论文

作者Li Hai-Xia1; Li Zhan-Kui1; Wang Fang-Cong2; Li Rong-Hua1; Chen Cui-Hong1; Wang Xiu-Hua1; Rong Xin-Juan1; Liu Feng-Qiong1; Wang Zhu-Sheng1; Li Chun-Yan1
刊名CHINESE PHYSICS C
出版日期2015-06-01
卷号39页码:4
关键词nuclear radiation detectors stratified implantation P-N junction reverse body resistance
ISSN号1674-1137
DOI10.1088/1674-1137/39/6/066005
英文摘要In the fabrication of a 48 mm x48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P+ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.
资助项目National Natural Science Foundation of China[11175223] ; National Natural Science Foundation of China[11305231] ; National Natural Science Foundation of China[11205220]
WOS研究方向Physics
语种英语
WOS记录号WOS:000355571700014
出版者CHINESE PHYSICAL SOC
资助机构National Natural Science Foundation of China
源URL[http://119.78.100.186/handle/113462/39902]  
专题中国科学院近代物理研究所
通讯作者Li Hai-Xia
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Li Hai-Xia,Li Zhan-Kui,Wang Fang-Cong,et al. Application of stratified implantation for silicon micro-strip detectors[J]. CHINESE PHYSICS C,2015,39:4.
APA Li Hai-Xia.,Li Zhan-Kui.,Wang Fang-Cong.,Li Rong-Hua.,Chen Cui-Hong.,...&Lu Zi-Wei.(2015).Application of stratified implantation for silicon micro-strip detectors.CHINESE PHYSICS C,39,4.
MLA Li Hai-Xia,et al."Application of stratified implantation for silicon micro-strip detectors".CHINESE PHYSICS C 39(2015):4.

入库方式: OAI收割

来源:近代物理研究所

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