Application of stratified implantation for silicon micro-strip detectors
文献类型:期刊论文
作者 | Li Hai-Xia1![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
刊名 | CHINESE PHYSICS C
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出版日期 | 2015-06-01 |
卷号 | 39页码:4 |
关键词 | nuclear radiation detectors stratified implantation P-N junction reverse body resistance |
ISSN号 | 1674-1137 |
DOI | 10.1088/1674-1137/39/6/066005 |
英文摘要 | In the fabrication of a 48 mm x48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P+ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements. |
资助项目 | National Natural Science Foundation of China[11175223] ; National Natural Science Foundation of China[11305231] ; National Natural Science Foundation of China[11205220] |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000355571700014 |
出版者 | CHINESE PHYSICAL SOC |
资助机构 | National Natural Science Foundation of China |
源URL | [http://119.78.100.186/handle/113462/39902] ![]() |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Li Hai-Xia |
作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China |
推荐引用方式 GB/T 7714 | Li Hai-Xia,Li Zhan-Kui,Wang Fang-Cong,et al. Application of stratified implantation for silicon micro-strip detectors[J]. CHINESE PHYSICS C,2015,39:4. |
APA | Li Hai-Xia.,Li Zhan-Kui.,Wang Fang-Cong.,Li Rong-Hua.,Chen Cui-Hong.,...&Lu Zi-Wei.(2015).Application of stratified implantation for silicon micro-strip detectors.CHINESE PHYSICS C,39,4. |
MLA | Li Hai-Xia,et al."Application of stratified implantation for silicon micro-strip detectors".CHINESE PHYSICS C 39(2015):4. |
入库方式: OAI收割
来源:近代物理研究所
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