Phonon contribution to nonionizing energy loss in silicon detectors
文献类型:期刊论文
作者 | Li Rong-Hua1![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
刊名 | CHINESE PHYSICS C
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出版日期 | 2015-06-01 |
卷号 | 39页码:4 |
关键词 | nonionizing energy loss silicon micro-strip detector phonon working lifetime |
ISSN号 | 1674-1137 |
DOI | 10.1088/1674-1137/39/6/066004 |
英文摘要 | Nonionizing energy loss (NIEL) has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects, neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons, has been established using the Monte Carlo code SHIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles. NIEL is proportional to the equivalent irradiation fluence that the detector has received. |
WOS关键词 | HEAVY-IONS ; NIEL CALCULATIONS |
资助项目 | National Natural Science Foundation of China[11175223] ; National Natural Science Foundation of China[11305231] ; National Natural Science Foundation of China[11205220] |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000355571700013 |
出版者 | CHINESE PHYSICAL SOC |
资助机构 | National Natural Science Foundation of China |
源URL | [http://119.78.100.186/handle/113462/39917] ![]() |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Li Rong-Hua |
作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Nanyang Inst Technol, Comp & Informat Engn Inst, Nanyang 473004, Peoples R China |
推荐引用方式 GB/T 7714 | Li Rong-Hua,Li Zhan-Kui,Yang Lei,et al. Phonon contribution to nonionizing energy loss in silicon detectors[J]. CHINESE PHYSICS C,2015,39:4. |
APA | Li Rong-Hua.,Li Zhan-Kui.,Yang Lei.,Li Dong-Mei.,Li Hai-Xia.,...&Lu Zi-Wei.(2015).Phonon contribution to nonionizing energy loss in silicon detectors.CHINESE PHYSICS C,39,4. |
MLA | Li Rong-Hua,et al."Phonon contribution to nonionizing energy loss in silicon detectors".CHINESE PHYSICS C 39(2015):4. |
入库方式: OAI收割
来源:近代物理研究所
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