Study of surface blistering in GaN by hydrogen implantation at elevated temperatures
文献类型：期刊论文
| 作者 | Li, B. S.; Wang, Z. G.; Zhang, H. P. |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2015-09-01 |
| 卷号 | 590页码:64-70 |
| 关键词 | Implantation Cross-sectional transmission electron microscopy Dislocation loops Blisters Exfoliation |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2015.07.039 |
| 英文摘要 | We have investigated mechanisms of ion-cut in H-2(+)-implanted GaN by analyzing microstructural features of H-2(+)-implanted GaN at room temperature, 573 K and 723 K. Using optical microscopy and transmission electron microscopy, it was found that the in-plane compressive stress induced by the H-implantation was necessary for H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient in-plane compressive stress to induce surface blistering. (C) 2015 Elsevier B.V. All rights reserved. |
| WOS关键词 | SILICON ; LAYER ; EXFOLIATION ; GROWTH ; SI |
| 资助项目 | National Natural Science Foundation of China[11005130] ; National Natural Science Foundation of China[11475229] ; West Light Foundation of the Chinese Academy of Sciences |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000361057100011 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | National Natural Science Foundation of China ; West Light Foundation of the Chinese Academy of Sciences |
| 源URL | [http://119.78.100.186/handle/113462/40679]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, B. S. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Wang, Z. G.,Zhang, H. P.. Study of surface blistering in GaN by hydrogen implantation at elevated temperatures[J]. THIN SOLID FILMS,2015,590:64-70. |
| APA | Li, B. S.,Wang, Z. G.,&Zhang, H. P..(2015).Study of surface blistering in GaN by hydrogen implantation at elevated temperatures.THIN SOLID FILMS,590,64-70. |
| MLA | Li, B. S.,et al."Study of surface blistering in GaN by hydrogen implantation at elevated temperatures".THIN SOLID FILMS 590(2015):64-70. |
入库方式： OAI收割
来源：近代物理研究所
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