Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films
文献类型：期刊论文
| 作者 | Nie, Xinran1,2; Zhang, Bin1,2; Wang, Jianzhong1,2; Shi, Liqun1,2; Di, Zengfeng3; Guo, Qinglei3 |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2015-12-15 |
| 卷号 | 161页码:355-359 |
| 关键词 | P-type ZnO:N film Room-temperature ferromagnetism V-O defects BMPs |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2015.08.143 |
| 英文摘要 | Ferromagnetism in p-type N-doped ZnO films, deposited on (0001) sapphire substrates by radio frequency (rf) reactive magnetron sputtering at different N-2/O-2 ratios, has been observed at room temperature. Both the p-type conduction and ferromagnetism are originated from the substitution of O with N. At the N-2/O-2 ratio of 15:15, the film displays the maximum hole density and the minimum resistivity as well as the maximum Ms. The transition from n-type to p-type strongly depends on both the substitutional nitrogen on the oxygen site (N-O) and oxygen vacancy (V-O) concentrations. The observed ferromagnetism of p-type ZnO:N films is intrinsic and strongly related to both the N-O and V-O content and can be interpreted by the bound magnetic polarons (BMPs) model. (C) 2015 Elsevier B.V. All rights reserved. |
| WOS关键词 | THERMAL-OXIDATION ; THIN-FILMS ; EPITAXY |
| 资助项目 | National Natural Science Foundation of China[10775033] ; National Natural Science Foundation of China[11075038] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000364891700092 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/41006]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, Bin |
| 作者单位 | 1.Fudan Univ, Inst Modern Phys, Key Lab, Appl Ion Beam Phys Lab,Minist Educ, Shanghai 200433, Peoples R China 2.Fudan Univ, Dept Nucl Sci & Technol, Shanghai 200433, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Nie, Xinran,Zhang, Bin,Wang, Jianzhong,et al. Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films[J]. MATERIALS LETTERS,2015,161:355-359. |
| APA | Nie, Xinran,Zhang, Bin,Wang, Jianzhong,Shi, Liqun,Di, Zengfeng,&Guo, Qinglei.(2015).Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films.MATERIALS LETTERS,161,355-359. |
| MLA | Nie, Xinran,et al."Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films".MATERIALS LETTERS 161(2015):355-359. |
入库方式： OAI收割
来源：近代物理研究所
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