Microstructural response of InGaN to swift heavy ion irradiation
文献类型：期刊论文
| 作者 | Zhang, L. M.1; Jiang, W.2; Fadanelli, R. C.3; Ai, W. S.1; Peng, J. X.1; Wang, T. S.1; Zhang, C. H.4 |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2016-12-01 |
| 卷号 | 388页码:30-34 |
| ISSN号 | 0168-583X |
| 关键词 | Swift heavy ion irradiation Microstructure InGaN |
| DOI | 10.1016/j.nimb.2016.10.035 |
| 英文摘要 | A monocrystalline In0.18Ga0.82N film of similar to 275 nm in thickness grown on a GaN/Al2O3 substrate was irradiated with 290 MeV U-238(32+) ions to a fluence of 1.2 x 10(12) cm(-2) at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution X-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In0.18Ga0.82N film and the 3.0 mu m thick GaN buffer layer. The mean diameter of the tracks in In0.18Ga0.82N is similar to 9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In0.18Ga0.82N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0 0 02) planes in GaN with lattice expansion are observed by HRXRD. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS关键词 | THERMAL SPIKE MODEL ; STRUCTURAL DAMAGE ; GAN ; IMPLANTATION ; SEMICONDUCTORS ; NITRIDES ; PROGRESS ; METALS ; GROWTH ; INP |
| 资助项目 | National Natural Science Foundation of China[11305081] ; Fundamental Research Funds for the Central Universities[lzujbky-2016-28] ; DOE's Office of Biological and Environmental Research and located at the Pacific Northwest National Laboratory (PNNL) ; China Scholarship Council |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000389168300007 |
| 资助机构 | National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities ; DOE's Office of Biological and Environmental Research and located at the Pacific Northwest National Laboratory (PNNL) ; China Scholarship Council |
| 源URL | [http://119.78.100.186/handle/113462/43903]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, L. M. |
| 作者单位 | 1.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China 2.Pacific Northwest Natl Lab, Richland, WA 99352 USA 3.Univ Fed Rio Grande do Sul, Inst Fis, BR-91500 Porto Alegre, RS, Brazil 4.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, L. M.,Jiang, W.,Fadanelli, R. C.,et al. Microstructural response of InGaN to swift heavy ion irradiation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2016,388:30-34. |
| APA | Zhang, L. M..,Jiang, W..,Fadanelli, R. C..,Ai, W. S..,Peng, J. X..,...&Zhang, C. H..(2016).Microstructural response of InGaN to swift heavy ion irradiation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,388,30-34. |
| MLA | Zhang, L. M.,et al."Microstructural response of InGaN to swift heavy ion irradiation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 388(2016):30-34. |
入库方式： OAI收割
来源：近代物理研究所
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