Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling
文献类型：期刊论文
| 作者 | Zhou, J. K.1; Wang, T.1; Wang, W.1; Chen, S. W.1; Cao, Y.1; Liu, H. P.2; Si, M. S.1; Gao, C. X.1; Yang, D. Z.1; Xue, D. S.1 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2016-12-05 |
| 卷号 | 109页码:5 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4971406 |
| 英文摘要 | To control the semiconductor device under low magnetic field is still a great challenge for semiconductor magnetoelectronics. In this work, we report the observation of the magneto-photogalvanic effect in periodic GaAs dot arrays. With an increase in magnetic field from 0 to 1500 Oe, the photovoltage increases linearly for a wide temperature range from 80 to 430K. Compared with GaAs without the dot arrays, periodic GaAs dot arrays have a hundredfold increase of the magnetic-field-modulated photovoltage at room temperature. By changing the magnetic field orientation, the angular dependence of photovoltage reveals that the magneto-photogalvanic effect stems from the Hall electric field caused by optical current, and the enhancement of magneto-photogalvanic effect is attributed to the p-n junction coupling between GaAs dots. When the coupling between the GaAs dots is broken at the high temperatures, i.e., T = 430K, we demonstrate that the enh(a)ncement effect disappears as expected. Our results not only illustrate the magnetic control of energy flow in light harvest, but also provide an applicable way for semiconductor magnetoelectronics by utilizing p-n junction coupling. Published by AIP Publishing. |
| WOS关键词 | LARGE MAGNETORESISTANCE ; SILICON ; SEMICONDUCTORS |
| 资助项目 | NSFC of China[51372107] ; NSFC of China[11674141] ; PCSIRT[IRT16R35] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000390677700025 |
| 资助机构 | NSFC of China ; PCSIRT |
| 源URL | [http://119.78.100.186/handle/113462/44027]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Yang, D. Z. |
| 作者单位 | 1.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, J. K.,Wang, T.,Wang, W.,et al. Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling[J]. APPLIED PHYSICS LETTERS,2016,109:5. |
| APA | Zhou, J. K..,Wang, T..,Wang, W..,Chen, S. W..,Cao, Y..,...&Xue, D. S..(2016).Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling.APPLIED PHYSICS LETTERS,109,5. |
| MLA | Zhou, J. K.,et al."Enhancement of magneto-photogalvanic effect in periodic GaAs dot arrays by p-n junctions coupling".APPLIED PHYSICS LETTERS 109(2016):5. |
入库方式： OAI收割
来源：近代物理研究所
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