Study of surface exfoliation on 6H-SiC induced by H-2(+) implantation
文献类型：期刊论文
| 作者 | Zhang, L.1; Li, B. S.2 |
| 刊名 | PHYSICA B-CONDENSED MATTER
 |
| 出版日期 | 2017-03-01 |
| 卷号 | 508页码:104-111 |
| 关键词 | Smart-cut H-2(+) implantation Transmission electron microscopy Exfoliation Blisters |
| ISSN号 | 0921-4526 |
| DOI | 10.1016/j.physb.2016.12.027 |
| 英文摘要 | The effect of lattice damage generated by the H-2(+)-implantation on exfoliation efficiency in 6H-SiC wafers is investigated. < 0001 > 6H-SiC wafers were implanted with 134 keV H-2(+) ions to ion fluences from 1.5x10(16) to 5x10(16) H-2(+) cm(-2) and subsequently annealed at temperatures from 973 K to 1373 K. The samples were studied by a combination of optical microscopy and transmission electron microscopy. Only after 1373 K annealing for 15 min, blisters and exfoliation occur on the H-2(+)-implanted sample surface. With increasing the implantation fluences from 1.5x10(16) to 3.75x10(16) H-2(+) cm(-2), the exfoliation mean size decreases, while the exfoliation density increases. For the highest fluence of 5x10(16) H-2(+) cm(-2), seldom exfoliations occur on the sample surface. Microstructure analysis shows that exfoliation efficiency is largely controlled by the H-2(+)-implantation-induced lattice damage. The depth of the microcrack is related to the implantation fluence. The effect of implantation fluence on dislocation loops, platelet nucleation and growth is investigated. |
| WOS关键词 | SILICON-ON-INSULATOR ; TEMPERATURE ; TECHNOLOGY ; MECHANISMS ; GROWTH ; LAYER |
| 资助项目 | National Nature Science Foundation of China[11475229] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000398054800014 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Nature Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/44527]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, B. S. |
| 作者单位 | 1.Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, L.,Li, B. S.. Study of surface exfoliation on 6H-SiC induced by H-2(+) implantation[J]. PHYSICA B-CONDENSED MATTER,2017,508:104-111. |
| APA | Zhang, L.,&Li, B. S..(2017).Study of surface exfoliation on 6H-SiC induced by H-2(+) implantation.PHYSICA B-CONDENSED MATTER,508,104-111. |
| MLA | Zhang, L.,et al."Study of surface exfoliation on 6H-SiC induced by H-2(+) implantation".PHYSICA B-CONDENSED MATTER 508(2017):104-111. |
入库方式： OAI收割
来源：近代物理研究所
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