Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature
文献类型：期刊论文
| 作者 | Jin, Yuping; Zhang, Nuannuan; Zhang, Bin |
| 刊名 | MATERIALS
 |
| 出版日期 | 2017-03-01 |
| 卷号 | 10页码:10 |
| 关键词 | p-type ZnO: N films oxygen vacancy (V-O) zinc nitrite (Zn3N2) oxygen plasma |
| ISSN号 | 1996-1944 |
| DOI | 10.3390/ma10030236 |
| 英文摘要 | The oxygen vacancy (V-O) is known as the main compensation center in p-type ZnO, which leads to the difficulty of fabricating high-quality p-type ZnO. To reduce the oxygen vacancies, we oxidized Zn3N2 films in oxygen plasma and successfully prepared p-type ZnO: N films at temperatures ranging from room temperature to 300 degrees C. The films were characterized by X-ray diffraction (XRD), non-Rutherford backscattering (non-RBS) spectroscopy, X-ray photoelectron spectroscopy, photoluminescence spectrum, and Hall Effect. The results show that the nitrogen atoms successfully substitute the oxygen sites in the ZnO: N films. The film prepared at room temperature exhibits the highest hole concentration of 6.22 x10(18) cm(-3), and the lowest resistivity of 39.47 Omega.cm. In all ZnO: N films, the V-O defects are reduced significantly. At 200 degrees C, the film holds the lowest value of V-O defects and the strongest UV emission. These results imply that oxygen plasma is very efficient in reducing V-O defects in p-type ZnO: N films, and could greatly reduce the reaction temperature. This method is significant for the development of ZnO-based optoelectronic devices. |
| WOS关键词 | OPTICAL-PROPERTIES ; THIN-FILMS ; ELECTRICAL CHARACTERIZATION ; ROOM-TEMPERATURE ; PHOTOLUMINESCENCE ; TRANSISTORS ; OXIDATION ; NANORODS ; NITROGEN ; OXIDE |
| 资助项目 | National Natural Science Foundation of China[10775033] ; National Natural Science Foundation of China[11075038] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000400863500019 |
| 出版者 | MDPI AG |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/44823]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, Bin |
| 作者单位 | Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jin, Yuping,Zhang, Nuannuan,Zhang, Bin. Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature[J]. MATERIALS,2017,10:10. |
| APA | Jin, Yuping,Zhang, Nuannuan,&Zhang, Bin.(2017).Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature.MATERIALS,10,10. |
| MLA | Jin, Yuping,et al."Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature".MATERIALS 10(2017):10. |
入库方式： OAI收割
来源：近代物理研究所
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