Large magnetoresistance effect in nitrogen-doped silicon
文献类型：期刊论文
| 作者 | Wang, Tao1; Yang, Zhaolong1; Wang, Wei1; Si, Mingsu1; Yang, Dezheng2; Liu, Huiping2 ; Xue, Desheng1
|
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2017-05-01 |
| 卷号 | 7页码:5 |
| ISSN号 | 2158-3226 |
| DOI | 10.1063/1.4972795 |
| 英文摘要 | In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f) of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications. (C) 2016 Author(s). |
| WOS关键词 | JUNCTIONS |
| 资助项目 | National Basic Research Program of China[2012CB933101] ; National Nature Science of China[11034004] ; National Nature Science of China[51372107] ; National Nature Science of China[51371093] ; PCSIRT[IRT1251] ; SRFDP[20130211130003] ; FRFCU[lzujbky-2014-42] ; FRFCU[lzujbky-2015-204] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000402797100325 |
| 出版者 | AMER INST PHYSICS |
| 资助机构 | National Basic Research Program of China ; National Nature Science of China ; PCSIRT ; SRFDP ; FRFCU |
| 源URL | [http://119.78.100.186/handle/113462/44846]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Yang, Dezheng |
| 作者单位 | 1.Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Tao,Yang, Zhaolong,Wang, Wei,et al. Large magnetoresistance effect in nitrogen-doped silicon[J]. AIP ADVANCES,2017,7:5. |
| APA | Wang, Tao.,Yang, Zhaolong.,Wang, Wei.,Si, Mingsu.,Yang, Dezheng.,...&Xue, Desheng.(2017).Large magnetoresistance effect in nitrogen-doped silicon.AIP ADVANCES,7,5. |
| MLA | Wang, Tao,et al."Large magnetoresistance effect in nitrogen-doped silicon".AIP ADVANCES 7(2017):5. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。