Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell
文献类型：期刊论文
| 作者 | Ye, Bing1,2,3; Liu, Jie1 ; Wang, Tie-Shan3; Liu, Tian-Qi1,2; Luo, Jie1,2; Wang, Bin1,2; Yin, Ya-Nan1,2; Ji, Qing-Gang1,2; Hu, Pei-Pei1,2; Sun, You-Mei1
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2017-08-01 |
| 卷号 | 26页码:6 |
| 关键词 | single event upset energy straggle proton irradiation nanodevice |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/26/8/088501 |
| 英文摘要 | This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders. |
| WOS关键词 | NM SOI SRAM ; HARDNESS ASSURANCE |
| 资助项目 | National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000407024700001 |
| 出版者 | IOP PUBLISHING LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/45415]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.UCAS, Beijing 100049, Peoples R China 3.Lanzhou Univ, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ye, Bing,Liu, Jie,Wang, Tie-Shan,et al. Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell[J]. CHINESE PHYSICS B,2017,26:6. |
| APA | Ye, Bing.,Liu, Jie.,Wang, Tie-Shan.,Liu, Tian-Qi.,Luo, Jie.,...&Hou, Ming-Dong.(2017).Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell.CHINESE PHYSICS B,26,6. |
| MLA | Ye, Bing,et al."Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell".CHINESE PHYSICS B 26(2017):6. |
入库方式： OAI收割
来源：近代物理研究所
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