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A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM

文献类型：期刊论文

作者Wang, Bin1,2; Zeng, Chuanbin3; Geng, Chao4; Liu, Tianqi1; Khan, Maaz1; Yan, Weiwei3; Hou, Mingdong1; Ye, Bing1,2; Sun, Youmei1; Yin, Yanan1,2
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2017-09-01
卷号406页码:437-442
关键词Heavy ion irradiation Single event upset Active delay element SRAM cell Radiation hardened Silicon-on-insulator
ISSN号0168-583X
DOI10.1016/j.nimb.2017.01.034
英文摘要Single event upset (SEU) susceptibility of unhardened 6T/SRAM and hardened active delay element (ADE)/SRAM, fabricated with 0.35 mu m silicon-on-insulator (SOI) CMOS technology, was investigated at heavy ion accelerator. The mechanisms were revealed by the laser irradiation and resistor-capacitor hardened techniques. Compared with conventional 6T/SRAM, the hardened ADE/SRAM exhibited higher tolerance to heavy ion irradiation, with an increase of about 80% in the LET threshold and a decrease of similar to 64% in the limiting upset cross-section. Moreover, different probabilities between 0 -> 1 and 1 -> 0 transitions were observed, which were attributed to the specific architecture of ADE/SRAM memory cell. Consequently, the radiation-hardened technology can be an attractive alternative to the SEU tolerance of the device-level. (C) 2017 Elsevier B.V. All rights reserved.
WOS关键词P-N-JUNCTIONS ; LASER SIMULATION ; CROSS-SECTIONS ; SOI ; DESIGN ; SRAM ; COLLECTION ; SOISRAMS ; BULK
资助项目National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11375241] ; National Natural Science Foundation of China[11275237]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000407659500008
出版者ELSEVIER SCIENCE BV
资助机构National Natural Science Foundation of China
源URL[http://119.78.100.186/handle/113462/45435]  
专题中国科学院近代物理研究所
通讯作者Liu, Jie
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
4.Shenzhen State Microelect Co Ltd, Shenzhen 518057, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Bin,Zeng, Chuanbin,Geng, Chao,et al. A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,406:437-442.
APA Wang, Bin.,Zeng, Chuanbin.,Geng, Chao.,Liu, Tianqi.,Khan, Maaz.,...&Liu, Jie.(2017).A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,406,437-442.
MLA Wang, Bin,et al."A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 406(2017):437-442.

入库方式： OAI收割

来源：近代物理研究所

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