Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs
文献类型：期刊论文
| 作者 | Ye, B.1,2,3; Liu, J.1; Wang, T. S.3; Liu, T. Q.1,2; Maaz, K.1; Luo, J.1,2; Wang, B.1,2; Yin, Y. N.1,2; Ji, Q. G.1,2; Sun, Y. M.1 |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2017-09-01 |
| 卷号 | 406页码:443-448 |
| 关键词 | SRAM Low energy proton Single event upset Direct ionization |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2017.03.162 |
| 英文摘要 | The single event upset (SEU) response of 65 nm commercial double data rate static random access memory (SRAM) and quad data rate SRAM was investigated by using proton beams with energies in the range of 0.15 MeV to 8.0 MeV. Experimental results show that a significant number of SEU occurrences can be triggered when the energy of incident proton is below 1 MeV. For the low energy protons, the SEU cross section measured in these SRAMs was found to increase with increasing proton energy, attaining a peak value, and then decreases as the proton energy was further increased. While in case of quad data rate SRAMs, it seems that they are more sensitive to SEU occurrences as compared with double data rate SRAMs. The bias voltage and data pattern dependence on SEU cross section induced by the low energy protons were also investigated in this work. In addition, the over-layer thickness of the SRAMs and the impact of degrader use in proton induced SEU test were also analyzed in detail. Monte Carlo simulations results indicate that the use of degrader in case of low energy proton induced SEU test results in a significant reduction of the SEU cross section. (C) 2017 Elsevier B.V. All rights reserved. |
| WOS关键词 | GEANT4 |
| 资助项目 | National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[11375241] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000407659500009 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/45550]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, J. |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.UCAS, Beijing 100049, Peoples R China 3.Lanzhou Univ, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ye, B.,Liu, J.,Wang, T. S.,et al. Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,406:443-448. |
| APA | Ye, B..,Liu, J..,Wang, T. S..,Liu, T. Q..,Maaz, K..,...&Hou, M. D..(2017).Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,406,443-448. |
| MLA | Ye, B.,et al."Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 406(2017):443-448. |
入库方式： OAI收割
来源：近代物理研究所
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