Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes
文献类型：期刊论文
| 作者 | Liu, Wei1,2,3; Zhang, Shukui3; Stutzman, Marcy3; Poelker, Matt3 |
| 刊名 | PHYSICAL REVIEW ACCELERATORS AND BEAMS
 |
| 出版日期 | 2016-10-24 |
| 卷号 | 19页码:8 |
| ISSN号 | 2469-9888 |
| DOI | 10.1103/PhysRevAccelBeams.19.103402 |
| 英文摘要 | Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10000 V ions. Moreover, the implantation damage with 10000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. This result is consistent with enhanced ion channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate. |
| WOS关键词 | ATOMIC-HYDROGEN ; PHOTOEMISSION ; CS |
| 资助项目 | U.S. DOE[DE-AC05-06OR23177] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000410539500002 |
| 出版者 | AMER PHYSICAL SOC |
| 资助机构 | U.S. DOE |
| 源URL | [http://119.78.100.186/handle/113462/45611]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Wei |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, 509 Nanchang Rd, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, 19 A Yuquan Rd, Beijing 100049, Peoples R China 3.Thomas Jefferson Natl Accelerator Facil, 12000 Jefferson Ave, Newport News, VA 23606 USA |
| 推荐引用方式 GB/T 7714 | Liu, Wei,Zhang, Shukui,Stutzman, Marcy,et al. Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes[J]. PHYSICAL REVIEW ACCELERATORS AND BEAMS,2016,19:8. |
| APA | Liu, Wei,Zhang, Shukui,Stutzman, Marcy,&Poelker, Matt.(2016).Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes.PHYSICAL REVIEW ACCELERATORS AND BEAMS,19,8. |
| MLA | Liu, Wei,et al."Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes".PHYSICAL REVIEW ACCELERATORS AND BEAMS 19(2016):8. |
入库方式： OAI收割
来源：近代物理研究所
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