中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3

文献类型:期刊论文

作者Yu, Jinling1; Zeng, Xiaolin1; Zhang, Liguo2; He, Ke2; Cheng, Shuying1,3; Lai, Yunfeng1,3; Huang, Wei4; Chen, Yonghai4,5; Yin, Chunming6,7; Xue, Qikun2
刊名NANO LETTERS
出版日期2017-12-01
卷号17页码:7878-7885
ISSN号1530-6984
关键词Photoinduced inverse spin Hall effect surface state topological insulator Bi2Se3 two-dimensional electron gas
DOI10.1021/acs.nanolett.7b04172
英文摘要The three-dimensional (3D) topological insulator (TI) Bi2Se3 exhibits topologically protected, linearly dispersing Dirac surface states (SSs). To access the intriguing properties of these SSs, it is important to distinguish them from the coexisting two-dimensional electron gas (2DEG) on the surface. Here, we use circularly polarized light to induce the inverse spin Hall effect in a Bi2Se3 thin film at different temperatures (i.e., from 77 to 300 K). It is demonstrated that the photoinduced inverse spin Hall effect (PISHE) of the top SSs and the 2DEG can be separated based on their opposite signs. The temperature and power dependence of the PISHE also confirms our method. Furthermore, it is found that the PISHE in the 2DEG is dominated by the extrinsic mechanism, as revealed by the temperature dependence of the PISHE.
WOS关键词2-DIMENSIONAL ELECTRON-GAS ; EFFECT TRANSISTOR ; THIN-FILM ; TRANSPORT ; PHOTOCURRENTS
资助项目National Natural Science Foundation of China[61674038] ; National Natural Science Foundation of China[61306120] ; National Natural Science Foundation of China[61474114] ; National Natural Science Foundation of China[11574302] ; National Key Research and Development Program[2016YFB0402303]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000418393300098
资助机构National Natural Science Foundation of China ; National Key Research and Development Program
源URL[http://119.78.100.186/handle/113462/47002]  
专题中国科学院近代物理研究所
通讯作者Yu, Jinling; He, Ke
作者单位1.Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350108, Fujian, Peoples R China
2.Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Dept Phys, Beijing 100084, Peoples R China
3.Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Changzhou 213164, Jiangsu, Peoples R China
4.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
5.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
6.Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
7.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Dept Modern Phys, CAS Key Lab Microscale Magnet Resonance, Hefei 230026, Anhui, Peoples R China
推荐引用方式
GB/T 7714
Yu, Jinling,Zeng, Xiaolin,Zhang, Liguo,et al. Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3[J]. NANO LETTERS,2017,17:7878-7885.
APA Yu, Jinling.,Zeng, Xiaolin.,Zhang, Liguo.,He, Ke.,Cheng, Shuying.,...&Xue, Qikun.(2017).Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3.NANO LETTERS,17,7878-7885.
MLA Yu, Jinling,et al."Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3".NANO LETTERS 17(2017):7878-7885.

入库方式: OAI收割

来源:近代物理研究所

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