Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature
文献类型：期刊论文
| 作者 | Qi, Q.; Zhang, W. Z.; Shi, L. Q.; Zhang, W. Y.; Zhang, W.; Zhang, B. |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2012-09-30 |
| 卷号 | 520页码:6882-6887 |
| 关键词 | Titanium Carbide Radio-frequency Magnetron Sputtering Rutherford Backscattering Spectroscopy X-ray Diffraction |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2012.07.040 |
| 文献子类 | Article |
| 英文摘要 | Single-crystal films of TiC (111) have been synthesized at room temperature on Al2O3 (0001) substrates by radio frequency magnetron sputtering using a compound Ti-C target. The substrate temperature and bias were varied to explore the influence of deposition parameters on the crystal structure. Both Al2O3 (0001) and Si (100) substrates were used for epitaxial growth of TiC films. A series of characterizations of TiC films were carried out, including Rutherford backscattering spectroscopy, X-ray diffraction, Raman and X-ray photoelectron spectroscopy. Single-crystal films of TiC (111) on the Al2O3 (0001) were demonstrated. (C) 2012 Elsevier B.V. All rights reserved. |
| WOS关键词 | TITANIUM CARBIDE ; THIN-FILMS ; DEPOSITION ; TI3SIC2 ; SPECTROSCOPY ; COATINGS |
| 语种 | 英语 |
| WOS记录号 | WOS:000308207000010 |
| 出版者 | ELSEVIER SCIENCE SA |
| 源URL | [http://119.78.100.186/handle/113462/47788]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Shi, L. Q. |
| 作者单位 | Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qi, Q.,Zhang, W. Z.,Shi, L. Q.,et al. Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature[J]. THIN SOLID FILMS,2012,520:6882-6887. |
| APA | Qi, Q.,Zhang, W. Z.,Shi, L. Q.,Zhang, W. Y.,Zhang, W.,&Zhang, B..(2012).Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature.THIN SOLID FILMS,520,6882-6887. |
| MLA | Qi, Q.,et al."Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature".THIN SOLID FILMS 520(2012):6882-6887. |
入库方式： OAI收割
来源：近代物理研究所
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