Structures and optical properties of H-2(+)-implanted GaN epi-layers
文献类型：期刊论文
| 作者 | Li, B. S.; Wang, Z. G. |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2015-06-10 |
| 卷号 | 48 |
| 关键词 | Gan Epitaxial Films H-2(+) Implantation Implantation Damage Cross-sectional Transmission Electron Microscopy Dislocation Loops |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/48/22/225101 |
| 文献子类 | Article |
| 英文摘要 | The implantation damage build-up and optical properties of GaN epitaxial films under H-2(+) ion implantation have been investigated by a combination of Rutherford backscattering in channeling geometry, Raman spectroscopy, UV-visible spectroscopy and transmission electron microscopy. GaN epitaxial films were implanted with 134 keV H-2(+) ions to doses ranging from 3.75 x 10(16) to 1.75 x 10(17) H-2(+) cm(-2) at room temperature or the same dose of 1.5 x 10(17) H-2(+) cm(-2) at room temperature, 573 and 723 K. The dependence of lattice disorder induced by H-2(+)-implantation on the ion dose can be divided into a three-step damage process. A strong influence of the H concentration on the defect accumulation is discussed. The decrease in relative Ga disorder induced by H-2(+)-implantation is linear with increasing implantation temperature. The absorption coefficient of GaN epitaxial films increases with increasing ion dose, leading to the decrease in Raman scattering spectra of Ga-N vibration. With increasing implantation doses up to 5 x 10(16) H-2(+) cm(-2), nanoscale hydrogen bubbles are observed in the H deposition peak region. Interstitial-type dislocation loops are observed in the damaged layer located near the damage peak region, and the geometry of the dislocation loops produced by H implantation is analyzed. The surface layer is almost free of lattice disorder induced by H-2(+)-implantation. |
| WOS关键词 | IMPLANTED SILICON-CARBIDE ; DEFECTS ; RAMAN |
| 资助项目 | National Nature Science Foundation of China[11005130] ; National Nature Science Foundation of China[11475229] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000354600500003 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://119.78.100.186/handle/113462/47863]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, B. S. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lab Adv Nucl Mat, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Wang, Z. G.. Structures and optical properties of H-2(+)-implanted GaN epi-layers[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2015,48. |
| APA | Li, B. S.,&Wang, Z. G..(2015).Structures and optical properties of H-2(+)-implanted GaN epi-layers.JOURNAL OF PHYSICS D-APPLIED PHYSICS,48. |
| MLA | Li, B. S.,et al."Structures and optical properties of H-2(+)-implanted GaN epi-layers".JOURNAL OF PHYSICS D-APPLIED PHYSICS 48(2015). |
入库方式： OAI收割
来源：近代物理研究所
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