Implantation temperature and thermal annealing behavior in H-2(+)-implanted 6H-SiC
文献类型：期刊论文
| 作者 | Li, B. S.; Wang, Z. G.; Jin, J. F. |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2013-12-01 |
| 卷号 | 316页码:239-244 |
| 关键词 | 6h-sic Hydrogen Implantation Hrxrd Surface Morphology Ion-cut |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2013.09.016 |
| 文献子类 | Article |
| 英文摘要 | The effects of hydrogen implantation temperature and annealing temperature in 6H-SiC are studied by the combination of Rutherford backscattering in channeling geometry (RBS/C), high-resolution X-ray diffraction (HRXRD) and scanning electron microscopy (SEM). 6H-SiC wafers were implanted with 100 key H-2(+) ions to a fluence of 2.5 x 10(16) H-2(+) CM-2 at room temperature (RT), 573 K and 773 K. Post-implantation, the samples were annealing under argon gas flow at different temperatures from 973 K to 1373 K for isochronal annealing (15 min). The relative Si disorder at the damage peak for the sample implanted at RT decreases gradually with increasing annealing temperature. However, the reverse annealing effect is found for the samples implanted at 573 K and 773 K. As-implantation, the intensity of in-plane compressive stress is the maximum as the sample was implanted at RT, and is the minimum as the sample was implanted at 573 K. The intensity of in-plane compressive stress for the sample implanted at RT decreases gradually with increasing annealing temperature, while the intensities of in-plane compressive stress for the sample implanted at 573 K and 773 K show oscillatory changes with increasing annealing temperature. After annealing at 1373 K, blisters and craters occur on the sample surface and their average sizes increase with increasing implantation temperature. (C) 2013 Elsevier B.V. All rights reserved. |
| WOS关键词 | SILICON-CARBIDE ; IRRADIATION ; PLATELETS ; DEFECTS ; GALLIUM ; GROWTH ; DAMAGE |
| 资助项目 | National Natural Science Foundation of China[11505130] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000327921500034 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://119.78.100.186/handle/113462/48345]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, B. S. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Wang, Z. G.,Jin, J. F.. Implantation temperature and thermal annealing behavior in H-2(+)-implanted 6H-SiC[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,316:239-244. |
| APA | Li, B. S.,Wang, Z. G.,&Jin, J. F..(2013).Implantation temperature and thermal annealing behavior in H-2(+)-implanted 6H-SiC.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,316,239-244. |
| MLA | Li, B. S.,et al."Implantation temperature and thermal annealing behavior in H-2(+)-implanted 6H-SiC".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 316(2013):239-244. |
入库方式： OAI收割
来源：近代物理研究所
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