Effects of the surface oxide layer on platelet growth in H-2(+)-implanted Si
文献类型：期刊论文
| 作者 | Li, B. S.; Wang, Z. G. |
| 刊名 | VACUUM
 |
| 出版日期 | 2014-04-01 |
| 卷号 | 102页码:5-11 |
| 关键词 | Hydrogen Implantation Platelet Microcrack Annealing Smart-cut |
| ISSN号 | 0042-207X |
| DOI | 10.1016/j.vacuum.2013.10.027 |
| 文献子类 | Article |
| 英文摘要 | The effect of a surface oxide layer on platelet growth in H-2(+)-implanted Si was investigated. Samples of p-type Cz Si (100) and the same Si covered with a 170 nm thick thermal oxide layer were implanted with H-2(+) ions to a fluence of 2.5 x 10(16) H-2(+)/cm(2) at room temperature. Post-implantation thermal annealing at temperatures between 773 K and 973 K for 30 min was performed in a flow of N-2. Optical microscopy, cross-sectional transmission electron microscopy (XTEM) and micro-Raman spectroscopy were performed to investigate the effect of the oxide layer on platelet evolution upon annealing. Optical microscopy observations show that blisters and half-open blisters occur on the surface of Si with the oxide layer, but craters and half-open blisters occur on the pure Si surface. XTEM observations show that the growth rate of platelets in the defect band of Si with the oxide layer is slower than that in the pure Si sample, due to the lower concentration of vacancy-type defects in the Si with the oxide layer. The density of frank loops increases with increasing annealing temperature in the Si with the oxide layer. (C) 2013 Elsevier Ltd. All rights reserved. |
| WOS关键词 | INSULATOR MATERIAL TECHNOLOGY ; INDUCED EXFOLIATION ; SILICON ; IMPLANTATION ; MECHANISM ; HE |
| 资助项目 | National Natural Science Foundation of China[11505130] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000331350000002 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 源URL | [http://119.78.100.186/handle/113462/49427]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, B. S. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Wang, Z. G.. Effects of the surface oxide layer on platelet growth in H-2(+)-implanted Si[J]. VACUUM,2014,102:5-11. |
| APA | Li, B. S.,&Wang, Z. G..(2014).Effects of the surface oxide layer on platelet growth in H-2(+)-implanted Si.VACUUM,102,5-11. |
| MLA | Li, B. S.,et al."Effects of the surface oxide layer on platelet growth in H-2(+)-implanted Si".VACUUM 102(2014):5-11. |
入库方式： OAI收割
来源：近代物理研究所
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