The effects of swift heavy-ion irradiation on helium-ion-implanted silicon
文献类型：期刊论文
| 作者 | Li, B. S.; Du, Y. Y.; Wang, Z. G.; Shen, T. L.; Li, Y. F.; Yao, C. F.; Sun, J. R.; Cui, M. H.; Wei, K. F.; Zhang, H. P. |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2014-10-15 |
| 卷号 | 337页码:21-26 |
| ISSN号 | 0168-583X |
| 关键词 | He Bubbles Ar-ion Irradiation Strong Electronic Excitation Microstructure |
| DOI | 10.1016/j.nimb.2014.07.010 |
| 文献子类 | Article |
| 英文摘要 | Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. (100)-oriented silicon wafers were implanted with 30 key helium to a dose of 3 x 10(16) He/cm(2) at 600 K. Subsequently, the helium-implanted Si wafers were irradiated with 792 MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073 K for 30 min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed. (C) 2014 Elsevier B.V. All rights reserved. |
| WOS关键词 | BEAM IRRADIATION ; HE IMPLANTATION ; SI ; VOIDS ; NANOCAVITIES ; DIFFUSION ; CAVITIES ; DISLOCATIONS ; TEMPERATURE ; TECHNOLOGY |
| 资助项目 | National Basic Research Program of China[2010 CB832904] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000342267000005 |
| 源URL | [http://119.78.100.186/handle/113462/49707]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, B. S. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Du, Y. Y.,Wang, Z. G.,et al. The effects of swift heavy-ion irradiation on helium-ion-implanted silicon[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2014,337:21-26. |
| APA | Li, B. S..,Du, Y. Y..,Wang, Z. G..,Shen, T. L..,Li, Y. F..,...&Pang, L. L..(2014).The effects of swift heavy-ion irradiation on helium-ion-implanted silicon.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,337,21-26. |
| MLA | Li, B. S.,et al."The effects of swift heavy-ion irradiation on helium-ion-implanted silicon".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 337(2014):21-26. |
入库方式： OAI收割
来源：近代物理研究所
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