Effectiveness and failure modes of error correcting code in industrial 65 um CMOS SRAMs exposed to heavy ions
文献类型：期刊论文
| 作者 | Tong Teng1,2; Wang Xiao-Hui1,2; Zhang Zhan-Gang1,2; Ding Peng-Cheng1,3; Liu Jie1 ; Liu Tian-Qi1,2; Su Hong1
|
| 刊名 | NUCLEAR SCIENCE AND TECHNIQUES
 |
| 出版日期 | 2014-02-01 |
| 卷号 | 25 |
| 关键词 | Single Event Upsets (Seu) Sram Error Correcting Code (Ecc) Hamming Code Effectiveness Failure Modes |
| ISSN号 | 1001-8042 |
| 文献子类 | Article |
| 英文摘要 | Single event upsets (SEUs) induced by heavy ions were observed in 65 nm SRAMs to quantitatively evaluate the applicability and effectiveness of single-bit error correcting code (ECC) utilizing Hamming Code. The results show that the ECC did improve the performance dramatically, with the SEU cross sections of SRAMs with ECC being at the order of 10(-11) cm(2)/bit, two orders of magnitude higher than that without ECC (at the order of 10(-9) cm(2)/bit). Also, ineffectiveness of ECC module, including 1-, 2- and 3-bits errors in single word (not Multiple Bit Upsets), was detected. The ECC modules in SRAMs utilizing (12, 8) Hamming code would lose work when 2-bits upset accumulates in one codeword. Finally, the probabilities of failure modes involving 1-, 2- and 3-bits errors, were calcaulated at 39.39%, 37.88% and 22.73%, respectively, which agree well with the experimental results. |
| WOS关键词 | UPSETS ; TECHNOLOGY |
| 资助项目 | Important Direction Project of the CAS Knowledge Innovation Program[KJCX2-YW-N27] |
| WOS研究方向 | Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000335293500010 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://119.78.100.186/handle/113462/49763]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Su Hong |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Beijing 10049, Peoples R China 3.Northwest Normal Univ, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tong Teng,Wang Xiao-Hui,Zhang Zhan-Gang,et al. Effectiveness and failure modes of error correcting code in industrial 65 um CMOS SRAMs exposed to heavy ions[J]. NUCLEAR SCIENCE AND TECHNIQUES,2014,25. |
| APA | Tong Teng.,Wang Xiao-Hui.,Zhang Zhan-Gang.,Ding Peng-Cheng.,Liu Jie.,...&Su Hong.(2014).Effectiveness and failure modes of error correcting code in industrial 65 um CMOS SRAMs exposed to heavy ions.NUCLEAR SCIENCE AND TECHNIQUES,25. |
| MLA | Tong Teng,et al."Effectiveness and failure modes of error correcting code in industrial 65 um CMOS SRAMs exposed to heavy ions".NUCLEAR SCIENCE AND TECHNIQUES 25(2014). |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。