First-principles study of the threshold effect in the electronic stopping power of LiF and SiO2 for low-velocity protons and helium ions
文献类型：期刊论文
| 作者 | Mao, Fei1,2; Zhang, Chao1,2; Dai, Jinxia1,2; Zhang, Feng-Shou1,2,3 |
| 刊名 | PHYSICAL REVIEW A
 |
| 出版日期 | 2014-02-19 |
| 卷号 | 89 |
| ISSN号 | 1050-2947 |
| DOI | 10.1103/PhysRevA.89.022707 |
| 文献子类 | Article |
| 英文摘要 | Nonadiabatic dynamics simulations are performed to investigate the electronic stopping power of LiF and SiO2-cristobalite-high crystalline thin films when protons and helium ions are hyperchanneling in the < 001 > axis. In this theoretical framework, ab initio time-dependent density-functional theory calculations for electrons are combined with molecular dynamics simulations for ions in real time and real space. The energy transfer process between the ions and the electronic subsystem of LiF and SiO2 nanostructures is studied. The velocity-proportional stopping power of LiF and SiO2 for protons and helium ions is predicted in the low-energy range. The measured velocity thresholds of protons in LiF and SiO2, and helium ions in LiF are reproduced. The convergence of the threshold effect with respect to the separation of grid points is confirmed. The underlying physics of the threshold effect is clarified by analyzing the conduction band electron distribution. In addition, the electron transfer processes between the projectile ions and solid atoms in hyperchanneling condition are studied, and its effects on the energy loss is investigated. |
| WOS关键词 | DENSITY-FUNCTIONAL THEORY ; ENERGY-LOSS ; SLOW PROTONS ; MOLECULAR-DYNAMICS ; PROPORTIONALITY ; PROJECTILES ; CRYSTALS ; OCTOPUS ; TOOL |
| 资助项目 | European Commission[269131] |
| WOS研究方向 | Optics ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000332330600007 |
| 出版者 | AMER PHYSICAL SOC |
| 源URL | [http://119.78.100.186/handle/113462/49791]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, Feng-Shou |
| 作者单位 | 1.Beijing Normal Univ, Minist Educ, Coll Nucl Sci & Technol, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China 2.Beijing Radiat Ctr, Beijing 100875, Peoples R China 3.Natl Lab Heavy Ion Accelerator Lanzhou, Ctr Theoret Nucl Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Mao, Fei,Zhang, Chao,Dai, Jinxia,et al. First-principles study of the threshold effect in the electronic stopping power of LiF and SiO2 for low-velocity protons and helium ions[J]. PHYSICAL REVIEW A,2014,89. |
| APA | Mao, Fei,Zhang, Chao,Dai, Jinxia,&Zhang, Feng-Shou.(2014).First-principles study of the threshold effect in the electronic stopping power of LiF and SiO2 for low-velocity protons and helium ions.PHYSICAL REVIEW A,89. |
| MLA | Mao, Fei,et al."First-principles study of the threshold effect in the electronic stopping power of LiF and SiO2 for low-velocity protons and helium ions".PHYSICAL REVIEW A 89(2014). |
入库方式： OAI收割
来源：近代物理研究所
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