Effect of implantation temperature on exfoliation of H-2(+)-implanted Si
文献类型：期刊论文
| 作者 | Li, B. S.; Wang, Z. G.; Du, Y. Y.; Wei, K. F.; Yao, C. F.; Cui, M. H.; Li, Y. F.; Zhu, H. P. |
| 刊名 | VACUUM
 |
| 出版日期 | 2014-11-01 |
| 卷号 | 109页码:1-7 |
| 关键词 | Hydrogen Implantation Annealing Exfoliation Platelet Microcrack |
| ISSN号 | 0042-207X |
| DOI | 10.1016/j.vacuum.2014.06.013 |
| 文献子类 | Article |
| 英文摘要 | The effect of implantation temperature of crystalline silicon implanted with hydrogen on exfoliation was investigated. The samples were analyzed by Raman scattering spectroscopy, optical microscopy and transmission electron microscopy. Our experiment shows that the concentrations of implantation-induced defects and hydrogen decrease with the implantation temperature. Compared to the implantation at 573 K and 773 K, (100) platelets are preferentially nucleated when the sample was implanted at room temperature (RT), while {111} platelets are preferentially nucleated for the elevated temperature implantation. After annealing at 773 K, blisters and exfoliation occur for the sample implanted at RT but not the sample implanted at 573 K. Microstructure shows a microcrack in the damaged layer for the sample implanted at RT. After annealing at 973 K, blisters and exfoliation occur for the samples implanted at RT, 573 K and 773 K. The exfoliation mean size increases, but the exfoliation density decreases with the implantation temperature. Microstructure shows a microcrack in the damaged layer for the samples implanted at RT, 573 K and 773 K. The depth of the microcrack is related to the implantation temperature. The effects of implantation temperature on dislocation loops, platelet nucleation and growth were investigated. (C) 2014 Elsevier Ltd. All rights reserved. |
| WOS关键词 | SURFACE-LAYER EXFOLIATION ; SILICON ; TECHNOLOGY ; GROWTH |
| 资助项目 | National Natural Science Foundation of China[11005130] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000342716000001 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 源URL | [http://119.78.100.186/handle/113462/49831]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, B. S. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Wang, Z. G.,Du, Y. Y.,et al. Effect of implantation temperature on exfoliation of H-2(+)-implanted Si[J]. VACUUM,2014,109:1-7. |
| APA | Li, B. S..,Wang, Z. G..,Du, Y. Y..,Wei, K. F..,Yao, C. F..,...&Zhu, H. P..(2014).Effect of implantation temperature on exfoliation of H-2(+)-implanted Si.VACUUM,109,1-7. |
| MLA | Li, B. S.,et al."Effect of implantation temperature on exfoliation of H-2(+)-implanted Si".VACUUM 109(2014):1-7. |
入库方式： OAI收割
来源：近代物理研究所
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