Upgrade of the electron beam ion trap in Shanghai
文献类型：期刊论文
| 作者 | Lu, D.1,2; Yang, Y.1,2; Xiao, J.1,2; Shen, Y.1,2; Fu, Y.1,2; Wei, B.1,2; Yao, K.1,2; Hutton, R.1,2; Zou, Y.1,2 |
| 刊名 | REVIEW OF SCIENTIFIC INSTRUMENTS
 |
| 出版日期 | 2014-09-01 |
| 卷号 | 85 |
| ISSN号 | 0034-6748 |
| DOI | 10.1063/1.4894212 |
| 文献子类 | Article |
| 英文摘要 | Over the last few years the Shanghai electron beam ion trap (EBIT) has been successfully redesigned and rebuilt. The original machine, developed under collaboration with the Shanghai Institute of Applied Physics, first produced an electron beam in 2005. It could be tuned with electron energies between 1 and 130 keV and beam current up to 160 mA. After several years of operation, it was found that several modifications for improvements were necessary to reach the goals of better electron optics, higher photon detection, and ion injection efficiencies, and more economical running costs. The upgraded Shanghai-EBIT is made almost entirely from Ti instead of stainless steel and achieves a vacuum of less than 10(-10) Torr, which helps to minimize the loss of highly changed ions through charge exchange. Meanwhile, a more compact structure and efficient cryogenic system, and excellent optical alignment have been of satisfactory. The magnetic field in the central trap region can reach up till 4.8 T with a uniformity of 2.77 x 10(-4). So far the upgraded Shanghai-EBIT has been operated up to an electron energy of 151 keV and a beam current of up to 218 mA, although promotion to even higher energy is still in progress. Radiation from ions as highly charged as Xe-53+,Xe- 54+ has been produced and the characterization of current density is estimated from the measured electron beam width. (c) 2014 AIP Publishing LLC. |
| WOS关键词 | HIGHLY-CHARGED IONS ; EBIT ; PROGRESS |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000342910500014 |
| 源URL | [http://119.78.100.186/handle/113462/49933]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Lu, D. |
| 作者单位 | 1.Minist Educ, Key Lab Appl Ion Beam Phys, Shanghai 200433, Peoples R China 2.Fudan Univ, Inst Modern Phys, Shanghai EBIT Lab, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu, D.,Yang, Y.,Xiao, J.,et al. Upgrade of the electron beam ion trap in Shanghai[J]. REVIEW OF SCIENTIFIC INSTRUMENTS,2014,85. |
| APA | Lu, D..,Yang, Y..,Xiao, J..,Shen, Y..,Fu, Y..,...&Zou, Y..(2014).Upgrade of the electron beam ion trap in Shanghai.REVIEW OF SCIENTIFIC INSTRUMENTS,85. |
| MLA | Lu, D.,et al."Upgrade of the electron beam ion trap in Shanghai".REVIEW OF SCIENTIFIC INSTRUMENTS 85(2014). |
入库方式： OAI收割
来源：近代物理研究所
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