中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

文献类型:期刊论文

作者Gu, Yaxu1; Rong, Caicai2; Xu, Yadong1; Shen, Hao2; Zha, Gangqiang1; Wang, Ning1; Lv, Haoyan2; Li, Xinyi2; Wei, Dengke3; Jie, Wanqi1
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2015-01-15
卷号343页码:89-93
关键词Defect Tellurium (Te) Inclusion Cdznte Radiation Detectors Ibic
ISSN号0168-583X
DOI10.1016/j.nimb.2014.11.050
文献子类Article
英文摘要The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modifled Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. (C) 2014 Elsevier B.V. All rights reserved.
WOS关键词CADMIUM ZINC TELLURIDE ; CDTE ; PERFORMANCE ; DEFECTS ; CRYSTAL
语种英语
WOS记录号WOS:000348554400014
出版者ELSEVIER SCIENCE BV
源URL[http://119.78.100.186/handle/113462/50077]  
专题中国科学院近代物理研究所
通讯作者Jie, Wanqi
作者单位1.Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
2.Fudan Univ, Appl Ion Beam Phys Lab, Inst Modern Phys, Shanghai 200433, Peoples R China
3.Imdetek Corp Ltd, Xian 710072, Peoples R China
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Gu, Yaxu,Rong, Caicai,Xu, Yadong,et al. Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2015,343:89-93.
APA Gu, Yaxu.,Rong, Caicai.,Xu, Yadong.,Shen, Hao.,Zha, Gangqiang.,...&Jie, Wanqi.(2015).Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,343,89-93.
MLA Gu, Yaxu,et al."Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 343(2015):89-93.

入库方式: OAI收割

来源:近代物理研究所

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