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Theoretical study of the channeling effect in the electronic stopping power of silicon carbide nanocrystal for low-energy protons and helium ions

文献类型：期刊论文

作者Mao, Fei1,2; Zhang, Chao3; Zhang, Feng-Shou1,4,5
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2015-01
卷号342页码:215-220
关键词Stopping power Channeling effect Electron transfer Molecular dynamics
ISSN号0168-583X
DOI10.1016/j.nimb.2014.09.035
英文摘要Excited-states ab initio molecular dynamics model is employed to study the electronic stopping power of cubic silicon carbide nanocrystal when low-energy protons and helium ions are hyperchanneling in the [1 0 0], [1 1 0] and [1 1 1] major crystal axes. The energy transfer processes between the ions and the electronic subsystem of the cubic silicon carbide nanocrystalline are studied. The channeling effect in the electronic stopping power is determined by the unique electronic structure of these channels. The velocity-proportional stopping power is predicted for both protons and helium ions in the low-energy region. The calculated stopping power is in a quantitative agreement with the experimental data up to the stopping power maximum. The deviations of the stopping power of helium ions from the linear proportionality are attributed to the electron transfer at higher velocities. (C) 2014 Elsevier B.V. All rights reserved.
WOS关键词DENSITY-FUNCTIONAL THEORY ; MOLECULAR-DYNAMICS ; BEAM ; OCTOPUS ; TOOL ; GAS ; HE ; SI
资助项目European Commission's 7th Framework Programme (FP7-PEOPLE-IRSES)[269131]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000347770500033
出版者ELSEVIER SCIENCE BV
源URL[http://119.78.100.186/handle/113462/57064]  
专题中国科学院近代物理研究所
通讯作者Zhang, Feng-Shou
作者单位1.Beijing Normal Univ, Coll Nucl Sci & Technol, Key Lab Beam Technol & Mat Modificat, Minist Educ, Beijing 100875, Peoples R China
2.Univ South China, Sch Nucl Sci & Technol, Hengyang 421001, Peoples R China
3.Anhui Univ Sci & Technol, Sch Mat Sci & Engn, Huainan 232001, Peoples R China
4.Beijing Radiat Ctr, Beijing 100875, Peoples R China
5.Natl Lab Heavy Ion Accelerator Lanzhou, Ctr Theoret Nucl Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Mao, Fei,Zhang, Chao,Zhang, Feng-Shou. Theoretical study of the channeling effect in the electronic stopping power of silicon carbide nanocrystal for low-energy protons and helium ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2015,342:215-220.
APA Mao, Fei,Zhang, Chao,&Zhang, Feng-Shou.(2015).Theoretical study of the channeling effect in the electronic stopping power of silicon carbide nanocrystal for low-energy protons and helium ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,342,215-220.
MLA Mao, Fei,et al."Theoretical study of the channeling effect in the electronic stopping power of silicon carbide nanocrystal for low-energy protons and helium ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 342(2015):215-220.

入库方式： OAI收割

来源：近代物理研究所

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