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Enhanced magnetism of SiC with He defects

文献类型：期刊论文

作者Cheng, Wei1,2; Liu, Guo-Qiang2; Zhang, Feng-Shou1,3,4; Zhou, Hong-Yu1
刊名PHYSICS LETTERS A
出版日期2012-10
卷号376页码:3363-3367
ISSN号0375-9601
关键词SiC Magnetism Defects Ab initio calculations
DOI10.1016/j.physleta.2012.08.053
英文摘要Helium defects in silicon carbide are studied using first principle calculations. The magnetization of various defects, such as vacancies, helium interstitials, and interstitial and vacancy complexes, are investigated. There is no magnetic element in silicon carbide. However, when a silicon atom is substituted by a helium atom, a ferromagnetic ground state is found. The total magnetic moment is found to be 4.0 mu(B). When the silicon atom is substituted by a helium atom, the four nearest carbon atoms are separated, and the p orbitals of the four carbon atoms are localized. This results in narrow bands within the conduction and valence bands. The magnitude of the magnetic moment is related to the C-He distance. (C) 2012 Elsevier B.V. All rights reserved.
WOS关键词TOTAL-ENERGY CALCULATIONS ; WAVE BASIS-SET ; SILICON-CARBIDE ; SIC/SIC COMPOSITES ; GRAPHENE ; HELIUM ; IRRADIATION ; POINT
资助项目National Basic Research Program of China[2010CB832903]
WOS研究方向Physics
语种英语
出版者ELSEVIER SCIENCE BV
WOS记录号WOS:000311865500101
源URL[http://119.78.100.186/handle/113462/57071]  
专题中国科学院近代物理研究所
通讯作者Zhang, Feng-Shou
作者单位1.Beijing Normal Univ, Key Lab Beam Technol & Mat Modificat, Minist Educ, Coll Nucl Sci & Technol, Beijing 100875, Peoples R China
2.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
3.Beijing Radiat Ctr, Beijing 100875, Peoples R China
4.Natl Lab Heavy Ion Accelerator Lanzhou, Ctr Theoret Nucl Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Cheng, Wei,Liu, Guo-Qiang,Zhang, Feng-Shou,et al. Enhanced magnetism of SiC with He defects[J]. PHYSICS LETTERS A,2012,376:3363-3367.
APA Cheng, Wei,Liu, Guo-Qiang,Zhang, Feng-Shou,&Zhou, Hong-Yu.(2012).Enhanced magnetism of SiC with He defects.PHYSICS LETTERS A,376,3363-3367.
MLA Cheng, Wei,et al."Enhanced magnetism of SiC with He defects".PHYSICS LETTERS A 376(2012):3363-3367.

入库方式： OAI收割

来源：近代物理研究所

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