中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ab initio electronic stopping power and threshold effect of channeled slow light ions in HfO2

文献类型:期刊论文

作者Li, Chang-Kai1,2; Wang, Feng3; Liao, Bin1,2; OuYang, Xiao-Ping4; Zhang, Feng-Shou1,2,5
刊名PHYSICAL REVIEW B
出版日期2017-09
卷号96
ISSN号2469-9950
DOI10.1103/PhysRevB.96.094301
英文摘要We present an ab initio study of the electronic stopping power of protons and helium ions in an insulating material, HfO2. The calculations are carried out in channeling conditions with different impact parameters by employing Ehrenfest dynamics and real-time, time-dependent density functional theory. The satisfactory comparison with available experiments demonstrates that this approach provides an accurate description of electronic stopping power. The velocity-proportional stopping power is predicted for protons and helium ions in the low-energy region, which conforms to the linear response theory. Due to the existence of a wide band gap, a threshold effect in the extremely low velocity regime below excitation is expected. For protons, the threshold velocity is observable, while it does not appear in the case of helium ions. This indicates the existence of extra energy-loss channels beyond the electron-hole pair excitation when helium ions are moving through the crystal. To analyze it, we checked the charge state of the moving projectiles and an explicit charge exchange behavior between the ions and host atoms was found. The missing threshold effect for helium ions is attributed to the charge transfer, which also contributes to energy loss of the ion.
WOS关键词MOVING ELECTRIFIED PARTICLES ; DENSITY-FUNCTIONAL THEORY ; ENERGY-LOSS ; MOLECULAR-DYNAMICS ; MATTER ; SOLIDS ; SCATTERING ; VELOCITY ; PROTONS ; TIME
资助项目European Commissions 7th Framework Programme (FP7-PEOPLE-IRSES)[269131]
WOS研究方向Physics
语种英语
WOS记录号WOS:000408822900002
出版者AMER PHYSICAL SOC
源URL[http://119.78.100.186/handle/113462/57164]  
专题中国科学院近代物理研究所
通讯作者Zhang, Feng-Shou
作者单位1.Beijing Normal Univ, Coll Nucl Sci & Technol, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China
2.Beijing Radiat Ctr, Beijing 100875, Peoples R China
3.Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
4.Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China
5.Natl Lab Heavy Ion Accelerator Lanzhou, Ctr Theoret Nucl Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式
GB/T 7714
Li, Chang-Kai,Wang, Feng,Liao, Bin,et al. Ab initio electronic stopping power and threshold effect of channeled slow light ions in HfO2[J]. PHYSICAL REVIEW B,2017,96.
APA Li, Chang-Kai,Wang, Feng,Liao, Bin,OuYang, Xiao-Ping,&Zhang, Feng-Shou.(2017).Ab initio electronic stopping power and threshold effect of channeled slow light ions in HfO2.PHYSICAL REVIEW B,96.
MLA Li, Chang-Kai,et al."Ab initio electronic stopping power and threshold effect of channeled slow light ions in HfO2".PHYSICAL REVIEW B 96(2017).

入库方式: OAI收割

来源:近代物理研究所

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