Ab initio electronic stopping power and threshold effect of channeled slow light ions in HfO2
文献类型:期刊论文
作者 | Li, Chang-Kai1,2; Wang, Feng3; Liao, Bin1,2; OuYang, Xiao-Ping4; Zhang, Feng-Shou1,2,5 |
刊名 | PHYSICAL REVIEW B
![]() |
出版日期 | 2017-09 |
卷号 | 96 |
ISSN号 | 2469-9950 |
DOI | 10.1103/PhysRevB.96.094301 |
英文摘要 | We present an ab initio study of the electronic stopping power of protons and helium ions in an insulating material, HfO2. The calculations are carried out in channeling conditions with different impact parameters by employing Ehrenfest dynamics and real-time, time-dependent density functional theory. The satisfactory comparison with available experiments demonstrates that this approach provides an accurate description of electronic stopping power. The velocity-proportional stopping power is predicted for protons and helium ions in the low-energy region, which conforms to the linear response theory. Due to the existence of a wide band gap, a threshold effect in the extremely low velocity regime below excitation is expected. For protons, the threshold velocity is observable, while it does not appear in the case of helium ions. This indicates the existence of extra energy-loss channels beyond the electron-hole pair excitation when helium ions are moving through the crystal. To analyze it, we checked the charge state of the moving projectiles and an explicit charge exchange behavior between the ions and host atoms was found. The missing threshold effect for helium ions is attributed to the charge transfer, which also contributes to energy loss of the ion. |
WOS关键词 | MOVING ELECTRIFIED PARTICLES ; DENSITY-FUNCTIONAL THEORY ; ENERGY-LOSS ; MOLECULAR-DYNAMICS ; MATTER ; SOLIDS ; SCATTERING ; VELOCITY ; PROTONS ; TIME |
资助项目 | European Commissions 7th Framework Programme (FP7-PEOPLE-IRSES)[269131] |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000408822900002 |
出版者 | AMER PHYSICAL SOC |
源URL | [http://119.78.100.186/handle/113462/57164] ![]() |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Zhang, Feng-Shou |
作者单位 | 1.Beijing Normal Univ, Coll Nucl Sci & Technol, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China 2.Beijing Radiat Ctr, Beijing 100875, Peoples R China 3.Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China 4.Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China 5.Natl Lab Heavy Ion Accelerator Lanzhou, Ctr Theoret Nucl Phys, Lanzhou 730000, Gansu, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Chang-Kai,Wang, Feng,Liao, Bin,et al. Ab initio electronic stopping power and threshold effect of channeled slow light ions in HfO2[J]. PHYSICAL REVIEW B,2017,96. |
APA | Li, Chang-Kai,Wang, Feng,Liao, Bin,OuYang, Xiao-Ping,&Zhang, Feng-Shou.(2017).Ab initio electronic stopping power and threshold effect of channeled slow light ions in HfO2.PHYSICAL REVIEW B,96. |
MLA | Li, Chang-Kai,et al."Ab initio electronic stopping power and threshold effect of channeled slow light ions in HfO2".PHYSICAL REVIEW B 96(2017). |
入库方式: OAI收割
来源:近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。