. Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K
文献类型：会议论文
| 作者 | Zhang, H. H.1,2; Gao, W. M.1; Shen, Y. L.1; Li, B. S.2; Bao, Y; Tian, L; Gong, JH |
| 出版日期 | 2011 |
| 关键词 | 6H-SiC Raman UV RBS-C |
| 卷号 | 177 |
| DOI | 10.4028/www.scientific.net/AMR.177.287 |
| 页码 | 287-+ |
| 英文摘要 | Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to analyze the annealing behavior of defects and the optimistic effect of cavities to oxygen. It was found that the cavities had strong getting effect to oxygen and captured its neighboring implanted oxygen atom, and enhanced the formation of SixOy compound, thus helped shaping the buried oxide in a well defined region. In addition, it also minished the damage level in lattice. The interface between damage layer and crystalline layer was estimated to be 198 mu below surface of 6H-SiC. The implanted oxygen was pegged in the compressed and serried cavity layer, making the amorphous layer narrower than that of reference samples. |
| 会议录 | TESTING AND EVALUATION OF INORGANIC MATERIALS I
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| 会议录出版者 | TRANS TECH PUBLICATIONS LTD |
| 会议录出版地 | KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, SWITZERLAND |
| 语种 | 英语 |
| 资助项目 | Natural Science Foundation of Jiangxi Province[2009GZC0031] |
| WOS研究方向 | Materials Science |
| WOS记录号 | WOS:000290469000075 |
| 源URL | [http://119.78.100.186/handle/113462/57328]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, H. H. |
| 作者单位 | 1.Jiangxi Sci & Technol Normal Univ, Jiangxi Key Lab Surface & Engn, Nanchang 330013, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, H. H.,Gao, W. M.,Shen, Y. L.,et al. . Structural and Optical Properties of 6H-SiC Helium and Oxygen Implanted at 700 K[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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