Heavy ion-induced deformation of radiation-amorphized U3Si
文献类型：会议论文
| 作者 | Hou, MD; Klaumunzer, S |
| 出版日期 | 2003-08 |
| 关键词 | plastic deformation electronic energy loss effect ripple formation fission fragment damage U3Si |
| 卷号 | 209 |
| DOI | 10.1016/S0168-583X(03)00516-0 |
| 页码 | 149-153 |
| 英文摘要 | Ten micrometre thick U3Si layers were amorphized by ion bombardment with 250 MeV Xe ions at room temperature. Subsequently these layers were post-irradiated with either 250 MeV Xe ions or 120 MeV Kr ions below 100 K at a beam incidence angle of 45degrees. After irradiation, the surface morphology was examined at room temperature by optical microscopy. At small fluences the surface of amorphous U3Si revealed a displacement in direction of the projection of the ion beam onto the surface. At larger fluences a ripple structure developed. The observations can be understood as consequences of a shear flow released by the formation of fluid ion tracks. From the experimental data an electronic energy loss threshold of 19 keV/nm is deduced for the formation of such tracks in amorphous U3Si. Obviously, for estimating the in-pile damage the electronic energy loss of fast fission fragments cannot be ignored. (C) 2003 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000184884700024 |
| 源URL | [http://119.78.100.186/handle/113462/57411]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Klaumunzer, S |
| 作者单位 | 1.Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hou, MD,Klaumunzer, S. Heavy ion-induced deformation of radiation-amorphized U3Si[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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