Defect production and annealing induced by electronic energy loss in pure metal
文献类型：会议论文
| 作者 | Wang, ZG; Dufour, C; Hou, MD; Jin, GM; Jin, YF; Paumier, E; Toulemonde, M |
| 出版日期 | 1998-02 |
| 关键词 | electronic energy loss thermal spike vacancy and interstitial stochastic thermal defect production and annealing damage efficiency |
| 卷号 | 135 |
| 期号 | 1-4 |
| 页码 | 265-269 |
| 英文摘要 | This work reports on the theoretical studies of defect production and annealing induced by electronic energy loss S-e in pure metal. The selected metal was a-iron in which irradiation effects produced by swift heavy ions have been well studied experimentally by Dunlop et al. [Nucl. Instr. and Meth. B 90 (1994) 330]. According to thermal spike model in metals and taking into account the principles of ion-solid interactions and thermal atomic jumps and migrations in solid, we have done numerical calculations of spatial distributions of vacancies and interstitials created by nuclear collisions, concentration-dependent thermal migration and recombination of existed defects and thermal defect generation for given swift heavy ion irradiations. The calculated results suggested that threshold S-e values for defect annealing and production were about lj and 38 keV/nm which are in agreement with experiments. The comparison of damage efficiencies deduced from our numerical calculations with experimental ones have shown that S-e induced defect production and annealing in pure metal can be a result of thermal transient process. (C) 1998 Elsevier Science B.V. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000074395300048 |
| 源URL | [http://119.78.100.186/handle/113462/57525]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Wang, ZG |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Inst Sci Mat & Rayonnement, LERMAT, F-14050 Caen, France 3.Ctr Interdisciplinaire Rech Ions Lourds, F-14040 Caen, France |
| 推荐引用方式 GB/T 7714 | Wang, ZG,Dufour, C,Hou, MD,et al. Defect production and annealing induced by electronic energy loss in pure metal[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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