中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Defect production and annealing induced by electronic energy loss in pure metal

文献类型:会议论文

作者Wang, ZG; Dufour, C; Hou, MD; Jin, GM; Jin, YF; Paumier, E; Toulemonde, M
出版日期1998-02
关键词electronic energy loss thermal spike vacancy and interstitial stochastic thermal defect production and annealing damage efficiency
卷号135
期号1-4
页码265-269
英文摘要This work reports on the theoretical studies of defect production and annealing induced by electronic energy loss S-e in pure metal. The selected metal was a-iron in which irradiation effects produced by swift heavy ions have been well studied experimentally by Dunlop et al. [Nucl. Instr. and Meth. B 90 (1994) 330]. According to thermal spike model in metals and taking into account the principles of ion-solid interactions and thermal atomic jumps and migrations in solid, we have done numerical calculations of spatial distributions of vacancies and interstitials created by nuclear collisions, concentration-dependent thermal migration and recombination of existed defects and thermal defect generation for given swift heavy ion irradiations. The calculated results suggested that threshold S-e values for defect annealing and production were about lj and 38 keV/nm which are in agreement with experiments. The comparison of damage efficiencies deduced from our numerical calculations with experimental ones have shown that S-e induced defect production and annealing in pure metal can be a result of thermal transient process. (C) 1998 Elsevier Science B.V.
会议录NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者ELSEVIER SCIENCE BV
会议录出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种英语
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号WOS:000074395300048
源URL[http://119.78.100.186/handle/113462/57525]  
专题中国科学院近代物理研究所
通讯作者Wang, ZG
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Inst Sci Mat & Rayonnement, LERMAT, F-14050 Caen, France
3.Ctr Interdisciplinaire Rech Ions Lourds, F-14040 Caen, France
推荐引用方式
GB/T 7714
Wang, ZG,Dufour, C,Hou, MD,et al. Defect production and annealing induced by electronic energy loss in pure metal[C]. 见:.

入库方式: OAI收割

来源:近代物理研究所

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