Production of EUV power with SECRAL
文献类型：会议论文
| 作者 | Zhao, Huan-Yu; Zhao, Hong-Wei; Sun, Liang-Ting; Zhang, Xue-Zhen; Sheng, Liu-Si; Tian, Chao-Yang; Zhang, Guo-Bin |
| 出版日期 | 2007-07 |
| 关键词 | EUV light source ECR plasma EUV power |
| 卷号 | 31 |
| 页码 | 229-231 |
| 英文摘要 | The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography. However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product. Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography. ECR plasma seems to be one of the alternatives. In order to investigate the feasibility of ECR plasma as a EUV light source, the EUV power emitted by SECRAL was measured. A EUV power of 1.03W in 4 pi sr solid angle was obtained when 2000W 18GHz rf power was launched, and the corresponding CE was 0.5%. Considering that SECRAL is designed to produce very high charge state ions, this very preliminary result is inspiring. Room-temperature ECR plasma and Sn plasma are both in the planned schedule. |
| 会议录 | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
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| 会议录出版者 | SCIENCE CHINA PRESS |
| 会议录出版地 | 16 DONGHUANGCHENGGEN NORTH ST, BEIJING 100717, PEOPLES R CHINA |
| 语种 | 中文 |
| WOS研究方向 | Physics |
| WOS记录号 | WOS:000248275200055 |
| 源URL | [http://119.78.100.186/handle/113462/57680]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhao, Huan-Yu |
| 作者单位 | 1.Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 3.Univ Sci & Technol China, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Huan-Yu,Zhao, Hong-Wei,Sun, Liang-Ting,et al. Production of EUV power with SECRAL[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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