Damage accumulation in gallium nitride irradiated with various energetic heavy ions
文献类型：会议论文
| 作者 | Zhang, C. H.; Song, Y.; Sun, Y. M.; Chen, H.; Yang, Y. T.; Zhou, L. H.; Jin, Y. F. |
| 出版日期 | 2007-03 |
| 关键词 | GaN swift heavv ions slow highly-charged ions RBS-channeling Raman scattering TEM |
| 卷号 | 256 |
| 期号 | 1 |
| DOI | 10.1016/j.nimb.2006.12.003 |
| 页码 | 199-206 |
| 英文摘要 | In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000245959300041 |
| 源URL | [http://119.78.100.186/handle/113462/57719]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, C. H.,Song, Y.,Sun, Y. M.,et al. Damage accumulation in gallium nitride irradiated with various energetic heavy ions[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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