Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu
文献类型：会议论文
| 作者 | Zhang, C. H.; Sun, Y. M.; Song, Y.; Shibayama, T.; Jin, Y. F.; Zhou, L. H. |
| 出版日期 | 2007-03 |
| 关键词 | 4H-SiC Ne ions Xe ions irradiation TEM defects |
| 卷号 | 256 |
| 期号 | 1 |
| DOI | 10.1016/j.nimb.2006.12.010 |
| 页码 | 243-247 |
| 英文摘要 | In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000245959300050 |
| 源URL | [http://119.78.100.186/handle/113462/57725]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Hokkaido Univ, Ctr Adv Res Energy Convers Mat, Sapporo, Hokkaido, Japan |
| 推荐引用方式 GB/T 7714 | Zhang, C. H.,Sun, Y. M.,Song, Y.,et al. Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。