Microstructural evolution in silicon implanted with chlorine ions
文献类型：会议论文
| 作者 | Zhang, C. H.; Shibayama, T.; Jin, Y. F.; Yang, Y. T.; Zhou, L. H.; Song, Y. |
| 出版日期 | 2007-03 |
| 关键词 | silicon chlorine implantation TEM re-crystallization defects |
| 卷号 | 256 |
| 期号 | 1 |
| DOI | 10.1016/j.nimb.2006.12.015 |
| 页码 | 272-275 |
| 英文摘要 | In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 x 10(15), 5 x 10(15), 1 x 10(16) and 5 x 10(16) ions cm(-2) and subsequently annealed at 1073 K for 30 min. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000245959300055 |
| 源URL | [http://119.78.100.186/handle/113462/57782]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Hokkaido Univ, Ctr Adv Res Energy Convers Mat, Sapporo, Hokkaido 060, Japan |
| 推荐引用方式 GB/T 7714 | Zhang, C. H.,Shibayama, T.,Jin, Y. F.,et al. Microstructural evolution in silicon implanted with chlorine ions[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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