SEU ground and flight data in static random access memories
文献类型：会议论文
| 作者 | Liu, J; Duan, JL; Hou, MD; Sun, YM; Yao, HJ; Mo, D; Zhang, QX; Wang, ZG; Jin, YF; Cai, JR |
| 出版日期 | 2006-04 |
| 关键词 | single event effects heavy ion simulation microcircuit |
| 卷号 | 245 |
| 期号 | 1 |
| DOI | 10.1016/j.nimb.2005.11.125 |
| 页码 | 342-345 |
| 英文摘要 | This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed oil SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based oil the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data. (c) 2005 Published by Elsevier B.V. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000236288500075 |
| 源URL | [http://119.78.100.186/handle/113462/57803]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, J |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Ctr Space Sci & Apply Res, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, J,Duan, JL,Hou, MD,et al. SEU ground and flight data in static random access memories[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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