Structural modification of C-doped SiO2 induced by swift heavy ion irradiations
文献类型：会议论文
| 作者 | Wang, Z. G.; Zhao, Z. M.; Benyagoub, A.; Toulemonde, M.; Levesque, F.; Song, Y.; Jin, Y. F.; Sun, Y. M.; Liu, C. B.; Zang, H. |
| 出版日期 | 2007-03 |
| 关键词 | swift heavy ion irradiations C-doped SiO2 structural modification FTIR and Raman spectroscopes |
| 卷号 | 256 |
| 期号 | 1 |
| DOI | 10.1016/j.nimb.2006.12.071 |
| 页码 | 288-292 |
| 英文摘要 | Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 x 10(16) to 8.6 x 10(17)C ions/cm(2), then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 x 10(11) to 3.8 x 10(12) ions/cm(2), respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C=C(O), C C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed. (c) 2006 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000245959300058 |
| 源URL | [http://119.78.100.186/handle/113462/57818]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Wang, Z. G. |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China 3.CIRIL, F-14070 Caen, France |
| 推荐引用方式 GB/T 7714 | Wang, Z. G.,Zhao, Z. M.,Benyagoub, A.,et al. Structural modification of C-doped SiO2 induced by swift heavy ion irradiations[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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