Defect production in silicon irradiated with 750 MeV Ar ions
文献类型：会议论文
| 作者 | Zhu, ZY; Hou, MD; Jin, YF; Liu, CL; Wang, YS; Han, J |
| 出版日期 | 1998-02 |
| 关键词 | irradiation defect silicon |
| 卷号 | 135 |
| 期号 | 1-4 |
| 页码 | 260-264 |
| 英文摘要 | Specimens of about 320 mu m thick and (1 1 1) oriented single crystalline silicon are irradiated with 750 MeV argon ions at room temperature to dose levels of 9 x 10(13) and 4.3 x 10(14) Ar/cm(2). Positron lifetime measurements, fourier transform infrared absorption (FT-IR) and electron paramagnetic resonance (EPR) techniques are applied to investigate the specimens. It is found that divacancies of neutral charge state are the main vacancy clusters induced by the irradiations. No amorphous phase is detected up to the highest dose. In the area where electronic processes are dominating a divacancy concentration around 7 x 10(16)/cm(3) is found which shows little change with dose. At the projected range where nuclear process is dominating the divacancy concentration increases dramatically with increasing of dose. It is argued that energy deposition through electronic processes can only induce limited damage in silicon and high electronic stopping power suppresses the formation of amorphous zones. (C) 1998 Elsevier Science B.V. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000074395300047 |
| 源URL | [http://119.78.100.186/handle/113462/57928]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhu, ZY |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, ZY,Hou, MD,Jin, YF,et al. Defect production in silicon irradiated with 750 MeV Ar ions[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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