Damage production in silicon irradiated with 112 MeV Ar ions
文献类型：会议论文
| 作者 | Liu, CL; Hou, MD; Zhu, ZY; Wang, ZG; Cheng, S; Jin, YF; Sun, YM; Li, CL |
| 出版日期 | 1998-02 |
| 关键词 | irradiation amorphous region divacancy silicon |
| 卷号 | 135 |
| 期号 | 1-4 |
| 页码 | 219-223 |
| 英文摘要 | Silicon samples were irradiated below 50 K with 112 MeV Ar ions. Defect production was investigated at room temperature by EPR and infrared optical absorption techniques. The EPR measurements reveal the presence of amorphous zones and neutral tetravacancies (Si-P3 center) in the as-irradiated samples. The infrared optical absorption measurements indicate the formation of divacancy. The concentration of divacancy increases with ion fluence and saturates at high fluence. The isochronal annealing behaviors of the radiation induced defect centers are found to be fluence dependent. For 1.0 x 10(14)/cm(2) irradiated sample, the disappearance of the Si-P3 center is accompanied by the appearance of Si-P1 and Si-B2 centers and the growth of Si-A11 center. The Si-P1 center and the isolated amorphous regions are annealed out between 500 degrees C and 550 degrees C. The Si-A11 center is stable up to 600 degrees C. For 8.0 x 10(14)/cm(2) irradiated sample, only Si-P1 center and the line due to the continued amorphous layer are detected above 200 degrees C. The recrystallization of the continued amorphous layer occurs at temperature higher than 600 degrees C. (C) 1998 Elsevier Science B.V. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000074395300039 |
| 源URL | [http://119.78.100.186/handle/113462/58089]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, CL |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, CL,Hou, MD,Zhu, ZY,et al. Damage production in silicon irradiated with 112 MeV Ar ions[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。