中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Defects in SiO2 glass irradiated with high energy Ar ions

文献类型:会议论文

作者Zhu, ZY; Jin, YF; Li, CL; Sun, YM; Zhang, CH; Meng, GH
出版日期1998-12
关键词irradiation defect SiO2 glass
卷号146
期号1-4
页码455-461
英文摘要SiO2 glass specimens are irradiated at room temperature with 560 MeV and 1.15 GeV Ar ions. Defect production is investigated by positron lifetime spectra, EPR and UV absorption measurements. Free volumes of about 0.065 nm(3) in size are found to be present in the virgin specimen from the corresponding Ortho-Positronium lifetimes. With increasing dose the intensity of the component corresponding to positronium decreases sharply. This is attributed to the preferred annihilation of positrons with the radiation-ionized-electrons wandering in free volumes of the material. Optical absorption bands are induced at about 5.8, 5 and 4.5 eV by the irradiations and the absorption coefficients increase gradually with increasing dose. The EPR spectra of the irradiated specimens show the occurrence of the E' center, the number density of which reveals two distinct regimes according to its dependence on dose. In the low dose range the number density of E' center follows a 0.23 power law dose dependence whereas at high dose it increases linearly with dose. Furthermore the EPR spectra show fine structure which changes with dose. (C) 1998 Elsevier Science B.V. All rights reserved.
会议录NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者ELSEVIER SCIENCE BV
会议录出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种英语
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号WOS:000077719400069
源URL[http://119.78.100.186/handle/113462/58126]  
专题中国科学院近代物理研究所
通讯作者Zhu, ZY
作者单位Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Zhu, ZY,Jin, YF,Li, CL,et al. Defects in SiO2 glass irradiated with high energy Ar ions[C]. 见:.

入库方式: OAI收割

来源:近代物理研究所

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