The impact of incident angle on multiple-bit upset in SRAMs
文献类型：会议论文
| 作者 | Zhang, QX; Hou, MD; Liu, J; Wang, ZG; Jin, YF; Zhu, ZY; Sun, YM |
| 出版日期 | 2003-08 |
| 关键词 | multiple-bit upset static random access memory angular effect energy deposited lateral distribution |
| 卷号 | 209 |
| DOI | 10.1016/S0168-583X(02)02026-8 |
| 页码 | 367-370 |
| 英文摘要 | The effect of ion incident angle on multiple-bit upset (MBU) has been investigated for static random access memory IDT71256. The test pattern dependent MBU ratio can be as high as 70% when tested by either normal incident Xe-136 ions or Ar-36 ions incident at large angles. The increase of single event upset cross-section at large angles for light ions are mainly due to occurrence of high-ratio MBU. Charges collected through funnel effect play an important role in inducing MBU in NMOS IDT71256. The MBU ratio is in proportional to energy deposited in whole sensitive layer, but the ratios of more than 2-bit upset is decided by lateral distribution of charges. (C) 2002 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000184884700061 |
| 源URL | [http://119.78.100.186/handle/113462/58131]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, QX |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, QX,Hou, MD,Liu, J,et al. The impact of incident angle on multiple-bit upset in SRAMs[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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