Large magnetoresistance effect in nitrogen-doped silicon
文献类型：会议论文
| 作者 | Wang, Tao2; Yang, Zhaolong2; Wang, Wei2; Si, Mingsu2; Yang, Dezheng1; Liu, Huiping1 ; Xue, Desheng2
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| 出版日期 | 2017-05 |
| 卷号 | 7 |
| 期号 | 5 |
| DOI | 10.1063/1.4972795 |
| 英文摘要 | In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f) of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications. (C) 2016 Author(s). |
| 会议录 | AIP ADVANCES
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| 会议录出版者 | AMER INST PHYSICS |
| 会议录出版地 | 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA |
| 语种 | 英语 |
| 资助项目 | FRFCU[lzujbky-2014-42] ; FRFCU[lzujbky-2015-204] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS记录号 | WOS:000402797100325 |
| 源URL | [http://119.78.100.186/handle/113462/58221]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Yang, Dezheng |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou, Peoples R China 2.Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Tao,Yang, Zhaolong,Wang, Wei,et al. Large magnetoresistance effect in nitrogen-doped silicon[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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