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Modification of ZnO films under high energy Xe-ion irradiations

文献类型：会议论文

作者Peng, X. P.1,3; Zang, H.1,2; Wang, Z. G.1; Song, Y.1; Liu, C. B.1,2; Wei, K. F.1,2; Zhang, C. H.1; Yao, C. F.1; Ma, Y. Z.1; Zhou, L. H.1
出版日期2008-06
关键词ZnO films Xe-ion irradiation RBS XRD FESEM photoluminescence
卷号266
期号12-13
DOI10.1016/j.nimb.2008.03.131
页码2863-2867
英文摘要ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.
会议录NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者ELSEVIER SCIENCE BV
会议录出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种英语
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号WOS:000257721300044
源URL[http://119.78.100.186/handle/113462/58224]  
专题中国科学院近代物理研究所
通讯作者Wang, Z. G.
作者单位1.CAS, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
3.Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Peng, X. P.,Zang, H.,Wang, Z. G.,et al. Modification of ZnO films under high energy Xe-ion irradiations[C]. 见:.

入库方式： OAI收割

来源：近代物理研究所

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