Study of the interaction of highly charged ions with SiO2 surface
文献类型：会议论文
| 作者 | Peng, H. B.1; Cheng, R.1; Yang, X. Y.1; Han, Y. C.1; Zhao, Y. T.2; Yang, J.1; Wang, S. W.1; Fang, Y.2; Wang, T. S.1 |
| 出版日期 | 2009-06-15 |
| 关键词 | Highly charged ions (HCIs) Sputtering yield Sputtering |
| 卷号 | 203 |
| 期号 | 17-18 |
| DOI | 10.1016/j.surfcoat.2009.02.029 |
| 页码 | 2387-2389 |
| 英文摘要 | Highly charged ions (HCIs) AO(q+)/Pbq+ are extracted from ECR source and impacted on solid surface Of SiO2 Sputtering yield as a function of incident angle is measured by multi-channel plate (MCP). The results have been fitted by a new formula. We proposed the cooperation model to explain the formula. The results demonstrate that the potential assisted kinetic sputtering yield increases with the charge state and potential sputtering (PS) could be induced by impact of HCIs. At larger incident angles, the sputtering yield is dominated by elastic collision between HCIs and material atoms. It is found that, smaller the incident angle, larger the contribution from the potential sputtering. (C) 2009 Elsevier B.V. All rights reserved. |
| 会议录 | SURFACE & COATINGS TECHNOLOGY
 |
| 会议录出版者 | ELSEVIER SCIENCE SA |
| 会议录出版地 | PO BOX 564, 1001 LAUSANNE, SWITZERLAND |
| 语种 | 英语 |
| WOS研究方向 | Materials Science ; Physics |
| WOS记录号 | WOS:000266682000010 |
| 源URL | [http://119.78.100.186/handle/113462/58309]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Peng, H. B. |
| 作者单位 | 1.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Peng, H. B.,Cheng, R.,Yang, X. Y.,et al. Study of the interaction of highly charged ions with SiO2 surface[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。