A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM
文献类型：会议论文
| 作者 | Yan, Weiwei1; Wang, Bin2,3; Zeng, Chuanbin1; Geng, Chao4; Liu, Tianqi2; Khan, Maaz2; Hou, Mingdong2; Ye, Bing2,3; Sun, Youmei2 ; Yin, Yanan2,3
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| 出版日期 | 2017-09 |
| 关键词 | Heavy ion irradiation Single event upset Active delay element SRAM cell Radiation hardened Silicon-on-insulator |
| 卷号 | 406 |
| DOI | 10.1016/j.nimb.2017.01.034 |
| 页码 | 437-442 |
| 英文摘要 | Single event upset (SEU) susceptibility of unhardened 6T/SRAM and hardened active delay element (ADE)/SRAM, fabricated with 0.35 mu m silicon-on-insulator (SOI) CMOS technology, was investigated at heavy ion accelerator. The mechanisms were revealed by the laser irradiation and resistor-capacitor hardened techniques. Compared with conventional 6T/SRAM, the hardened ADE/SRAM exhibited higher tolerance to heavy ion irradiation, with an increase of about 80% in the LET threshold and a decrease of similar to 64% in the limiting upset cross-section. Moreover, different probabilities between 0 -> 1 and 1 -> 0 transitions were observed, which were attributed to the specific architecture of ADE/SRAM memory cell. Consequently, the radiation-hardened technology can be an attractive alternative to the SEU tolerance of the device-level. (C) 2017 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11375241] ; National Natural Science Foundation of China[11275237] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000407659500008 |
| 源URL | [http://119.78.100.186/handle/113462/58417]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Shenzhen State Microelect Co Ltd, Shenzhen 518057, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yan, Weiwei,Wang, Bin,Zeng, Chuanbin,et al. A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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