Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes
文献类型:期刊论文
作者 | Liu, Wei1,2,3![]() |
刊名 | AIP ADVANCES
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出版日期 | 2018-07-01 |
卷号 | 8期号:7页码:075308 |
ISSN号 | 2158-3226 |
DOI | 10.1063/1.5040593 |
英文摘要 | GaAs-class strained superlattice (SSL) photocathodes can provide electron beams with electron spin polarization (ESP) exceeding the theoretical maximum 50% of bulk GaAs. In this paper, we describe the evaluation of a SSL structure composed of GaAsSb/AlGaAs and grown on a GaAs substrate. Theoretical analysis and numerical calculations show GaAsSb/AlGaAs SSL structures have the largest heavy-hole and light-hole energy splitting of all existing GaAs-class SSL structures, which should lead to the highest initial ESP. Five GaAsSb/AlGaAs SSL photocathode samples with different constituent species concentrations, number of layer pairs, and layer thicknesses were fabricated and evaluated. The highest ESP was similar to 77% obtained from a photocathode based on the GaAsSb0.15/Al0.38GaAs (1.55/4.1 nm x 15 layer pairs) SSL structure. (C) 2018 Author(s). |
WOS关键词 | POLARIZED ELECTRON-EMISSION ; GAAS PHOTOCATHODES ; SPIN POLARIZATION ; QUANTUM-WELLS ; CHARGE LIMIT ; PHOTOEMISSION ; INGAAS |
资助项目 | U.S. DOE[DE-AC05-06OR23177] ; U.S. DOEs Office of Nuclear Physics SBIR program[DE-SC0009516] ; U.S. Government |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
语种 | 英语 |
WOS记录号 | WOS:000440602300099 |
出版者 | AMER INST PHYSICS |
资助机构 | U.S. DOE ; U.S. DOEs Office of Nuclear Physics SBIR program ; U.S. Government |
源URL | [http://119.78.100.186/handle/113462/59128] ![]() |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Liu, Wei |
作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, 509 Nanchang Rd, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China 3.Thomas Jefferson Natl Accelerator Facil, 12000 Jefferson Ave, Newport News, VA 23606 USA 4.SVT Associates Inc, 7620 Execut Dr, Eden Prairie, MN 55344 USA |
推荐引用方式 GB/T 7714 | Liu, Wei,Chen, Yiqiao,Moy, Aaron,et al. Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes[J]. AIP ADVANCES,2018,8(7):075308. |
APA | Liu, Wei,Chen, Yiqiao,Moy, Aaron,Poelker, Matthew,Stutzman, Marcy,&Zhang, Shukui.(2018).Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes.AIP ADVANCES,8(7),075308. |
MLA | Liu, Wei,et al."Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes".AIP ADVANCES 8.7(2018):075308. |
入库方式: OAI收割
来源:近代物理研究所
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